SCT2080KE
N-channel SiC power MOSFET
・Induction heating
Package
V
V
GSS_surge
*3
A
A
Unit
A
C11
lAbsolute maximum ratings (T
a
= 25°C)
・Motor drives
lApplication
Total power dissipation
T
C
=25°C, See Fig.1
T
C
=100°C, See Fig.1
Parameter
V
GSS
・Solar inverters
・DC/DC converters
Symbol
40
80
I
D,pulse
*2
I
D
*1
28
V
DSS
I
D
*1
V
DSS
R
DS(on)
(Typ.)
I
D
5) Simple to drive
2) Fast switching speed
4) Easy to parallel
1200V
80mΩ
40A
lFeatures
1) Low on-resistance
3) Fast reverse recovery
lOutline
lInner circuit
lPackaging specifications
TO-247N
Range of storage temperature
T
stg
Junction temperature
T
j
Reel size (mm)
262
175
Pulsed drain current
Drain - Source voltage
Continuous drain current
Gate - Source surge voltage (ｔ
surge
˂ 300nsec)
-10 to +26
130
P
D
6) Pb-free lead plating ; RoHS compliant
Gate - Source voltage (DC)
Type
Packing
Marking
Packing code
Basic ordering unit (pcs)
Tape width (mm)
1200
Value
Tube
SCT2080KE
30
-
-
TO-247N
°C
°C
-55 to +175
V
-6 to +22
W
V
W
(1) Gate
(2) Drain
(3) Source
* Body Diode
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TSQ50211-SCT2080KE
29.Mar.2021 - Rev.001
Datasheet
SCT2080KE
Unit
Max.
Min.
Conditions
Values
Typ.
lElectrical characteristics (T
a
= 25°C)
Thermal resistance, junction - case
Symbol
Parameter
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
Parameter
R
thJC
Gate - Source leakage current
I
GSS-
V
GS
= -6V, V
DS
= 0V
I
GSS+
Zero gate voltage
drain current
Drain - Source breakdown
voltage
Symbol
I
DSS
Gate - Source leakage current
V
DS
= 1200V, V
GS
= 0V
-
nA
T
j
= 150°C
T
j
= 25°C
V
GS
= +22V, V
DS
= 0V
-
-
-100
nA
-
-
10
-
100
0.57
0.44
V
μA
2
1
Values
-
-
-
1200
lTypical Transient Thermal Characteristics
Gate threshold voltage
V
GS (th)
V
DS
= V
GS
, I
D
= 4.4mA
1.6
4.0
V
2.8
lThermal resistance
Max.
-
Typ.
Min.
Unit
°C/W
Unit
Ws/K
Value
5.00E-03
K/W
C
th1
C
th2
1.80E-02
R
th1
Symbol
Symbol
Value
Unit
7.80E-02
R
th3
1.62E-01
C
th3
2.49E-01
R
th2
1.97E-01
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© 2021 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
2/12
TSQ50211-SCT2080KE
29.Mar.2021 - Rev.001
Datasheet