Features

• Fast access time from clock: 5/5.4 ns

• Fast clock rate: 166/143 MHz

• Fully sync

hronous operation

• Internal pipelined architecture

• 8M word x 16-bit x 4-bank

• Programmable Mode registers

- CAS Latency: 2 or 3

- Burst Length: 1, 2, 4, 8, or full page

- Burst Type: Sequential or Interleaved

- Burst stop function

• Auto Refresh and Self Refresh

• 8192 refresh cycles/64ms

• CKE power down mode

• Single +3.3V

0.3V power supply

• Operating Temperature Range:

- Commercial: T

= 0~70°C

- Industrial: T

= -40~85°C

• Interface: LVTTL

• 54-pin 400 mil plastic TSOP II package

- Pb free and Halogen free

Table&1.&Key&Specifications!

AS4C32M16SB! -6/7

tCK3! Clock!Cycle!time!(min.)! 6/7!

tAC3! Access!time!from!CLK!(max.)! 5/5.4!

tRAS! Row!Active!time!(min.)! 42/42!

tRC! Row!Cycle!time!(min.)! 60/63!

Table&2.&Ordering&Information&

Part!Number! Frequency! Package! Temperature! Temp!Range!

AS4C32M16SB-7TCN! 143MHz! 54!Pin!TSOP!II! Commercial! 0°C!to!70°C!

AS4C32M16SB-7TIN! 143MHz! 54!Pin!TSOP!II!

Industrial

! -40°C!to!85°C

AS4C32M16SB-6TIN! 166MHz! 54!Pin!TSOP!II!

Industrial

-40°C!to!85°C

The 512Mb SDRAM is a high-speed CMOS

synchronous DRAM containing 512 Mbits. It is

internally configured as 4 Banks of 8M word

x 16

DRAM with a synchronous interface (all signals are

registered on the positive edge of the clock signal,

CLK). Read and write accesses to the SDRAM are

burst oriented; accesses start at a selected location

and continue for a programmed number of locations

in a programmed sequence. Accesses begin with the

registration of a Bank Activate command which is

then followed by a Read or Write command. The

SDRAM provides for programmable Read or Write

burst lengths of 1, 2, 4, 8, or full page, with a burst

termination option. An auto precharge function may

be enabled to provide a self-timed row precharge that

is initiated at the end of the burst sequence. The

refresh functions, either Auto or Self Refresh are

easy to use. By having a programmable mode

modes to maximize its performance. These devices

are well suited for applications requiring high memory

bandwidth and particularly well suited to high

performance PC applications.

Overview

AS4C32M16SB-6TIN

AS4C32M16SB-7TIN

AS4C32M16SB-7TCN

Confidential

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Rev.1.0 June 2016