Wuxi NCE Power Co., Ltd Page V2.0
1
NCEP045N10,NCEP045N10D
http://www.ncepower.com
NCE N-Channel Super Trench II Power MOSFET
Description
The series of devices uses Super Trench II technology that is
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
R
DS(ON)
and Q
g
. This device is ideal for high-frequency switching
and synchronous rectification.
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification
General Features
● V
DS
=100V,I
D
=125A
R
DS(ON)
=4.2mΩ , typical (TO-220)@ V
GS
=10V
R
DS(ON)
=4.0mΩ , typical (TO-263)@ V
GS
=10V
● Excellent gate charge x R
DS(on)
product(FOM)
● Very low on-resistance R
DS(on)
● 175°C operating temperature
● Pb-free lead plating
100% UIS TESTED!
100% ∆Vds TESTED!
Package Marking and Ordering Information
Device Marking Device Device Package Reel Size Tape width Quantity
NCEP045N10 NCEP045N10 TO-220-3L - - -
NCEP045N10D NCEP045N10D TO-263 - - -
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
100 V
Gate-Source Voltage
V
GS
±20 V
Drain Current-Continuous
I
D
125 A
Drain Current-Continuous(T
C
=100 )℃ I
D
(100℃) 95 A
Pulsed Drain Current
I
DM
500 A
Maximum Power Dissipation
P
D
200 W
Derating factor
1.33 W/℃
Single pulse avalanche energy
(Note 5)
E
AS
871 mJ
Operating Junction and Storage Temperature Range
T
J
,T
STG
-55 To 175 ℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case
(Note 2)
R
θJC
0.75 /W℃
TO-220
Schematic Diagram
TO-263
Wuxi NCE Power Co., Ltd Page V2.0
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NCEP045N10,NCEP045N10D
http://www.ncepower.com
Electrical Characteristics (T
C
=25℃unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V I
D
=250μA 100 - V
Zero Gate Voltage Drain Current I
DSS
V
DS
=100V,V
GS
=0V - - 1 μA
Gate-Body Leakage Current I
GSS
V
GS
=±20V,V
DS
=0V - - ±100 nA
On Characteristics
(Note 3)
Gate Threshold Voltage V
GS(th)
V
DS
=V
GS
,I
D
=250μA 2 3 4 V
TO-220 - 4.2 4.5
Drain-Source On-State Resistance R
DS(ON)
V
GS
=10V, I
D
=60A
TO-263 4.0 4.5
mΩ
Forward Transconductance g
FS
V
DS
=5V,I
D
=60A 120 - S
Dynamic Characteristics
(Note4)
Input Capacitance C
lss
- 5500 - PF
Output Capacitance C
oss
- 590 - PF
Reverse Transfer Capacitance C
rss
V
DS
=50V,V
GS
=0V,
F=1.0MHz
- 25 - PF
Switching Characteristics
(Note 4)
Turn-on Delay Time t
d(on)
- 21 - nS
Turn-on Rise Time t
r
- 13 - nS
Turn-Off Delay Time t
d(off)
- 40 - nS
Turn-Off Fall Time t
f
V
DD
=50V,I
D
=60A,
V
GS
=10V,R
G
=3Ω
- 12 - nS
Total Gate Charge Q
g
- 92 - nC
Gate-Source Charge Q
gs
- 27 nC
Gate-Drain Charge Q
gd
V
DS
=50V,I
D
=60A,
V
GS
=10V
- 21 nC
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
V
SD
V
GS
=0V,I
S
=60A - 1.2 V
Diode Forward Current
(Note 2)
I
S
- - 125 A
Reverse Recovery Time t
rr
- 72 - nS
Reverse Recovery Charge Qrr
T
J
= 25°C, I
F
=60A
di/dt = 100A/μs
(Note3)
- 140 - nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25 ,V℃
DD
=50V,V
G
=10V,L=0.5mH,Rg=25Ω