500mW SOD-123 Fast Switching Diode
Revision Sept 28, 2020
1
/
3
@ UN Semiconductor Co., Ltd. 2020
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Symbol
Parameter
Value
Units
BAV19W
BAV20W
BAV21W
V
R
Reverse Voltage
120
200
250
V
V
RM
Peak Reverse Voltage
100
150
250
V
P
d
Power Dissipation
500
mW
T
j
Operating junction temperature
150
ºC
T
STG
Storage temperature range
-65~+150
ºC
R
θ
JA
Thermal Resistance from Junction to Ambient
250
ºC/W
W
IV
Working Inverse Voltage
75
V
I
O
Average Rectified Current
200
mA
I
FM
Non-repetitive Peak Forward Current
400
mA
I
FSM
Peak Forward Surge Current @tp=1us; TA=25℃
2.5
A
Fast Switching Device (TRR <50 nS)
Power Dissipation of 500mW
High Stability and High Reliability
Low reverse leakage
JEDEC SOD-123 Package
Molding Compound Flammability Rating : UL 94V-O
Polarity: Color band denotes cathode end.
Quantity Per Reel : 3,000pcs
Lead Finish : Lead Free
Mounting Position: Any
Device Marking: BAV19W: A8
BAV20W: T2
BAV21W: T3
Notes:Valid provided that electrodes are kept at ambient temperature.
SOD-123
500mW SOD-123 Fast Switching Diode
Revision Sept 28, 2020
2
/
3
@ UN Semiconductor Co., Ltd. 2020
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Symbols Parameter Test Condition
Limits
Unit
Min Max
V
BR
Breakdown Voltage
I
B
=100uA
BAV19W
100 --- V
BAV20W
200 --- V
BAV21W
250 --- V
I
R
Reverse Leakage Current
V
R
=100V BAV19W
---
0.1 uA
V
R
=150V
BAV20W
--- 0.1 uA
V
R
=200V BAV21W
0.1 uA
V
F
Forward Voltage
I
F
=100mA
---
1.0 V
I
F
=200mA
---
1.25 V
T
RR
Reverse Recovery Time
I
F
= I
R
=30mA
--- 50 nS
R
L
=100Ω
I
RR
=
3mA
C Capacitance
V
R
=0V, f=1MHZ
--- 5 pF
Fig1. Forward Characteristics
Fig2. Reverse Characteristics