RB731XN SCHOTTKY BARRIER DIODE
FEATURES
Small Power Mold Type
Low V
F
High Reliability
APPLICATIONS
General Rectification
MARKING: 731
MAXIMUM RATINGS ( T
a
=25℃ unless otherwise noted )
Symbol Parameter Value Unit
V
R
DC Blocking Voltage 40 V
I
O
Average Rectified Forward Current 30 mA
I
FSM
Non-repetitive Peak Forward Surge Current@t=8.3ms 200 mA
P
D
Power Dissipation 200 mW
R
θJA
Thermal Resistance From Junction To Ambient 500
℃/W
T
j
Operating Junction Temperature Range
-40 ~ +125
℃
T
stg
Storage Temperature Range -55 ~ +150
℃
ELECTRICAL CHARACTERISTICS(T
a
=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Reverse voltage
V
(BR)
I
R
=100μA 40 V
Reverse current
I
R
V
R
=10V 1 μA
Forward voltage
V
F
I
F
=1mA 0.37 V
Total capacitance
C
tot
V
R
=1V,f=1MHz 2 pF
SOT-363
Solid dot = Pin1 indicate.
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-36 3 Plastic-Encapsulate Diodes
1
Rev. - 2.0
www.jscj-elec.com
0 2 4 6
8 10 12 14 16 18 20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 25 50 75 100 125
0
50
100
150
200
250
0 100 200 300
400 500 600 700
0.1
1
10
0102030
1
10
100
1000
10000
T
a
=25
℃
f=
1MH
z
Capaci
tance Characteristics
CAPACITANCE BETWEEN T
ERMINALS
C
T
(pF)
REVERSE VOLTAGE
V
R
(V)
Powe
r Deratin g Curve
POWER DISSIPATION
P
D
(mW)
AMBIENT T
EMPERATURE T
a
( )℃
Forw
ard Ch aracteristics
FORWARD
VOLTAGE V
F
(mV)
FORWARD CURRENT I
F
(mA)
T
a
=2
5
℃
T
a
=
1
0
0
℃
30
Reve
rse Characteristics
REVERSE VOLTAGE
V
R
(V)
REVERSE CURRENT I
R
(nA)
T
a
=25
℃
T
a
=100
℃
Typical Characteristics
2
Rev. - 2.0
www.jscj-elec.com