EMD9
FEATURES
Two DTA114Y
and DTC114Y transistors are built-in a package
Marking: D9
DTr1 Absolute maximum ratings (T
a
=25℃)
Parameter Symbol Limits Unit
Supply voltage
V
CC
50 V
Input voltage
V
IN
-6~+40 V
I
O
70
Output current
I
C(MAX)
100
mA
Power dissipation
P
d
150 mW
-55~+150
℃
Electrical characteristics (T
a
=25℃)
Parameter Symbol Min Typ Max Unit Conditions
V
I(off)
0.3 V
CC
=5V ,I
O
=100μA
Input voltage
V
I(on)
1.4
V
V
O
=0.3V ,I
O
=1mA
Output voltage
V
O(on)
0.1 0.3 V I
O
=5mA, I
I
=0.25mA
Input current
I
I
0.88 mA V
I
=5V
Output current
I
O(off)
0.5 μA V
CC
=50V, V
I
=0
DC current gain
G
I
68 VO=5V ,IO=5mA
Input resistanc
e
R
1
7 10 13 KΩ
Resistance ratio
R
2
/R
1
3.7 4.7 5.7
Transition frequency
f
T
250 MHz V
O
=10V ,I
O
=5mA,f=100MHz
Dual Digital Transistors (NPN+PNP)
SOT-563
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Digital Transistors (Built-in Resistors)
1
Rev. - 2.1
www.jscj-elec.com
T
J
,T
stg
Operation Junction and
Storage Temperature Range
DTr2
Absolute maximum ratings (T
a
=25℃)
Parameter Symbol Limits Unit
Supply voltage
V
CC
-50 V
Input voltage
V
IN
-40~+6 V
I
O
-70
Output current
I
C(MAX)
-100
mA
Power dissipation
P
d
150 mW
-55~+150
℃
Electrical characteristics (T
a
=25℃)
Parameter Symbol Min Typ Max Unit Conditions
V
I(off)
-0.3 V
CC
=-5V ,I
O
=-100μA
Input voltage
V
I(on)
-1.4
V
V
O
=-0.3V ,I
O
=-1mA
Output voltage
V
O(on)
-0.1 -0.3 V I
O
=-5mA,I
I
=-0.25mA
Input current
I
I
-0.88 mA V
I
=-5V
Output current
I
O(off)
-0.5 μA V
CC
=-50V, VI=0
DC current gain
G
I
68 V
O
=-5V ,I
O
=-5mA
Input resistance
R
1
7 10 13 KΩ
Resistance ratio
R
2
/R
1
3.7 4.7 5.7
Transition frequency
f
T
250 MHz V
O
=-10V ,I
O
=-5mA,f=100MHz
2
Rev. - 2.1
www.jscj-elec.com
T
J
,T
stg
Operation Junction and Storage
Temperature Range