MMDT2222A

FEATURE

Complementary PNP T

ype available MMDT2907A

MAXIMUM RATINGS (T

a

=25℃ unless otherwise noted)

Symbol Parameter Value Units

V

CBO

Collector-Base Vo

ltage

75 V

V

CEO

Collector-Emitter Voltage

40 V

V

EBO

Emitter-Base Voltage

6

V

I

C

Collector Current -Contin

uous 600 mA

P

C

Collector Power Dissip

ation 200 mW

℃

T

J

,T

stg

Oper

ation Junction and

Storage Temperature Range

-55~+150

MARKING: K1P

DUAL TRANSISTOR (NPN+NPN)

SOT-363

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-363 Plastic-Encapsulate Transistors

1

Rev. - 2.0

www.jscj-elec.com

Switching charact

eristics

Parameter Symbol Test conditions Min Max Unit

Delay time t

d

10 ns

Rise time t

r

V

CC

=30V, I

C

=150mA,

V

BE(off)

=0.5V,I

B1

=15mA

25 ns

Storag

e time t

S

225 ns

Fall time t

f

V

CC

=30V, I

C

=150mA,

I

B1

= -I

B2

= 15mA

60 ns

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherw

ise specified)

Parameter

Symbol Test conditions Min Max Unit

Collector-base b

reakdown voltage

V

(BR)CBO

I

C

= 10μA, I

E

=0 75 V

Collector-emitter br

eakdown voltage

V

(BR)CEO

I

C

= 10mA, I

B

=0 40 V

Emitter-base b

reakdown voltage

V

(BR)EBO

I

E

=10μA.I

C

=0 6 V

Collector cut-o

ff current

I

CBO

V

CB

= 60V, I

E

=0 10 nA

Collector cut-o

ff current

I

CEX

V

CE

= 60V,V

EB(off)

=3V 10 nA

Emitter cut-off current

I

EBO

V

EB

= 3 V, I

C

=0 10 nA

h

FE(1)

V

CE

=10V, I

C

= 0.1mA 35

h

FE(2)

V

CE

=10V, I

C

= 1mA 50

h

FE(3)

V

CE

=10V, I

C

= 10mA 75

h

FE(4)

V

CE

=10V, I

C

= 150mA 100 300

h

FE(5)

V

CE

=10V, I

C

= 500mA 40

DC current ga

in

h

FE(6)

V

CE

=1V, I

C

= 150mA 35

V

CE(sat)1

I

C

=150mA, I

B

= 15mA 0.3 V

Collector-emitter satur

ation voltage

V

CE(sat)2

I

C

=500mA, I

B

= 50mA 1 V

V

BE(sat)1

I

C

=150mA, I

B

=15mA 0.6 1.2 V

Base-emitter satur

ation voltage

V

BE(sat)2

I

C

=500mA, I

B

= 50mA 2 V

Trans

ition frequency

f

T

V

CE

=20V, I

C

= 20mA,

f=100MHz

300 MHz

Output Capacit

ance

C

ob

V

CB

=10V, I

E

=0,f=1MHz 8 p

F

Input Capacit

ance

C

ib

V

EB

=0.5V,I

C

= 0,f=1MHz 25 pF

Noise Figure

NF

V

CE

=10V, I

C

=100μA,

f=1KHz,Rs=1KΩ

4 dB

2

Rev. - 2.0

www.jscj-elec.com