S9012W
T
R
ANSIST
OR
(PNP)
FEA
T
URES
z
Complementary to S9013W
z
Excellent h
FE
linearity
MARKING: 2T1
ELECTRICAL CHARACTERISTICS (Ta
=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions Min Typ Max Unit
Collector-base br
eakdown voltage
V
(BR)CBO
I
C
= -100
μ
A, I
E
=0
-40 V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= -1mA, I
B
=0 -25 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=-100
μ
A, I
C
=0
-5 V
Collector cut-off current
I
CBO
V
CB
=-40V, I
E
=0 -0.1
μ
A
Collector cut-off cu
rrent
I
CEO
V
CE
=-20V, I
B
=0 -0.1
μ
A
Emitter cut-off current
I
EBO
V
EB
= -5V, I
C
=0 -0.1
μ
A
DC current gain
h
FE
V
CE
=-1V, I
C
= -50mA 120 400
Collector-emitter saturatio
n voltage
V
CE
(sat) I
C
=-500mA, I
B
= -50mA -0.6 V
Base-emitter saturatio
n voltage
V
BE
(sat) I
C
=-500mA, I
B
= -50mA -1.2 V
Transition frequency
f
T
V
CE
=-6V, I
C
= -20mA,
f=
30MHz
150 MHz
Collector out
put capacitance
C
ob
V
CB
=
-10
V,I
E
=0,f=
1
MHz
5 pF
CLASSIFICATION OF h
FE
Rank
L H J
Range
120-200 200-350 300-400
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage -40
V
V
CEO
Collector-Emitter Voltage -25
V
V
EBO
Emitter-Base Voltage -5
V
I
C
Collector Current -500 mA
P
C
Collector Power Dissipation 200 mW
R
ΘJA
Thermal Resistance From Junction To Ambient
625 ℃/W
Operation Junction and
Storage Temperature Range
T
J
,T
stg
-55～+150 ℃
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
S OT-323 Plastic-Encapsulate
Transistors
1
Rev. - 2.0
www.jscj-elec.com
-1 -10 -100
10
100
1000
-1 -10 -100
-1
-10
-
100
-1000
-0.1 -1 -10
1
-10 -100
10
0 25 50 75 100 125 150
0
50
100
150
200
250
-0.0 -0.2 -0.4 -0.6 -0
.8 -1.0
-0.1
-1
-10
-100
-1 -10 -100
-0.0
-0
.4
-0.8
-1.2
-0 -1 -2 -3 -4 -5
-0
-20
-40
-60
-80
f
T
—— I
C
h
FE
——
COMMON EMITTER
V
CE
=-1V
-500
T
a
=100
℃
T
a
=25
℃
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I
C
(mA)
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
COLLECTOR CURRENT I
C
(mA)
β=10
T
a
=25
℃
T
a
=100
℃
I
C
V
CEsat
——
-500
1000
100
-500
100
10
-20
Cob
Cib
REVERSE VOLTAGE V (V
)
f=1MHz
I
E
=0/I
C
=0
T
a
=25℃
V
CB
/ V
EB
C
ob
/ C
ib
——
CAPACITANCE C (pF)
-5
V
CE
=-6V
T
a
=25
℃
TRANSITION FREQ
UENCY f
T
(MHz)
COLLECTOR CURRENT I
C
(mA)
COLLECTOR PO
WER DISSIPATION
P
C
(mW)
AMBIENT TEM
PERATURE T
a
( )℃
P
C
—— T
a
V
BE
I
C
——
T
a
=25
℃
T
a
=100
℃
COMMON EMITTER
V
CE
=-1V
COLLECTOR CURRENT I
C
(mA)
BASE-EMMIT
ER VOLTAGE V
BE
(V)
β=10
BASE-EMITTER SAT
URATION
VOLTAGE V
BEsat
(V)
COLLECTOR CURRENT I
C
(mA)
T
a
=25
℃
T
a
=100℃
-500
I
C
V
BEsat
——
-300uA
-270uA
Static
Characteristic
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-EM
ITTER VOLTAGE V
CE
(V)
-240uA
-210uA
-180uA
-150uA
-120uA
-90uA
-60uA
I
B
=-30uA
COMMON
EM
ITTER
T
a
=25
℃
Typical Characteristics
2
Rev. - 2.0
www.jscj-elec.com