S9014W TRANSISTOR (NPN)
FEATURES
Complementary to S9015W
Small Surface Mount Package
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage 50 V
V
CEO
Collector-Emitter Voltage 45 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 100 mA
P
C
Collector Power Dissipation 200 mW
R
ΘJA
Thermal Resistance From Junction To Ambient 625
℃/W
Operation Junction and
Storage Temperature Range
℃
T
J
,T
stg
-55～+150
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage
V
(BR)CBO
I
C
=100µA, I
E
=0 50 V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=100µA, I
B
=0 45 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=100µA, I
C
=0 5 V
Collector cut-off current
I
CBO
V
CB
=50V, I
E
=0 100 nA
Collector cut-off current
I
CEO
V
CE
=35V, I
B
=0 1 uA
Emitter cut-off current
I
EBO
V
EB
=4V, I
C
=0 100 nA
DC current gain
h
FE
V
CE
=5V, I
C
=1mA 200 1000
Collector-emitter saturation voltage
V
CE(sat)
I
C
=100mA, I
B
=5mA 0.3 V
Base-emitter saturation voltage
V
BE(sat)
I
C
=100mA, I
B
=5mA 1 V
Base-emitter voltage
V
BE
V
CE
=5V, I
C
=2mA 0.58 0.7 V
Transition frequency
f
T
V
CE
=5V,I
C
=10mA , f=30MHz 150 MHz
Collector output capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz 3.5 pF
CLASSIFICATION OF h
FE
RANK L H
RANGE 200–450 450–1000
MARKING
J6
SOT–323
1. BASE
2. EMITTER
3. COLLECTOR
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate
Transistors
1
Rev. - 2.0
www.jscj-elec.com
0.1 1 10
0.1
1
10
100
0 25 50 75 100 125 150
0
50
100
150
200
250
0.0 0.3 0.6 0.9 1.2
0.1
1
10
100
02468
0
2
4
6
8
0.1 1 10 100
0.1
1
0.1 1 10 100
10
100
1000
0.1 1 10 100
0.01
0.1
1
0.1 1 10 100
1
10
100
1000
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
V
CB
/ V
EB
C
ob
/ C
ib
——
C
ob
C
ib
CAPACITANCE C (pF)
REVERSE VOLTAGE V
R
(V)
P
C
—— T
a
COLLECTOR POWER DISSIPAT
ION
P
C
(mW)
AMBIENT TEMPERAT
URE T
a
( )℃
COMMON EMITTER
V
CE
= 5V
V
BE
I
C
——
T
a
=100
℃
T
a
=25℃
COLLECTOR CURRENT I
C
(mA)
BASE-
EM
M
I
T
E
R VOLTAGE V
BE
(V)
20uA
COMMON
EMITTE
R
T
a
=25
℃
18uA
16uA
14uA
12uA
10uA
8uA
6uA
4uA
I
B
=2uA
S
t
at
i
c
C
haracteristic
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
20
f
T
——
h
FE
——
β=20
I
C
V
BEsat
——
T
a
=100
℃
T
a
=25
℃
BASE-EMITTER SATURAT
ION
VOLTAGE V
BEsat
(V)
COLLECTOR CURRENT I
C
(mA)
2
COMMON EMITTER
V
CE
= 5V
I
C
I
C
T
a
=25
℃
T
a
=100
℃
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I
C
(mA)
β=20
T
a
=100℃
T
a
=25
℃
I
C
V
CEsat
——
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
COLLECTOR CURRENT I
C
(mA)
COMMON EMITTER
V
CE
=5V
T
a
=25
℃
TRANSITION FREQUE
NCY f
T
(MHz)
COLLECTOR CURRENT I
C
(m
A)
Typical Characteristics
2
Rev. - 2.0
www.jscj-elec.com