2SA1013
TRANSI
ST
OR (PN
P
)
FEA
T
URE
y
High
Volt
age:V
CEO
=-160V
y Large Continuous Collector Current Capability
y Complement
ary to 2SC2383
MAXIMUM RATINGS (T
a
=25 unless otherwise noted℃ )
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage
-160 V
V
CEO
Collector-Emitter Voltage
-160 V
V
EBO
Emitter-Base Voltage -6 V
I
C
Collector Current -Continuo us -1 A
P
C
Collector Power Dissipation 0.9 W
Junction Temperature
℃
T
J
,T
stg
-55 to +150
TO-92L
1.
EMITTER
2.
COLLECTOR
3.
BASE
Equivalent Circuit
A101 'HYLFHFRGH
;;; &RGH
ORDERING INFORM
A
T
ION
z
A1013
Part Number Package Packing
Method Pack Quantity
2SA1013 TO-92L Bulk 500pcs/Bag
2SA1013-TA TO-92L Tape 2000pcs/Box
Solid
dot
=
Green
mo
ldi
ng compound device,
if none, the normal device
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
1
Rev. - 2.0
www.jscj-elec.com
a
T =25
Я
unless otherwise specified
Parameter
Symbol Test conditions Min Max Unit
Collector-base breakdo
wn voltage
V
(BR)CBO
I
C
=-
100μA , I
E
=0 -160
V
Collecto
r
-emitter b
r
ea
kd
o
wn voltage
V
(BR)CEO
I
C
= -1mA , I
B
=0 -160 V
Emitter-ba
s
e
b
r
eakd
o
wn voltage
V
(BR)EBO
I
E
= -10μA, I
C
=0 -6 V
Collecto
r cut-off current
I
CBO
V
CB
=-
150 V ,
I
E
=0
-1
μA
Emitter cut-off current
I
EBO
V
EB
=-6V
, I
C
=0 -1
μA
DC current gain
h
FE
V
CE
=-5 V
, I
C
=-
200mA 60 320
Collecto
r
-emitter satu
r
atio
n
voltage
V
CE(sat)
I
C
= -500m A, I
B
= -50mA -1.5 V
Base-emitter vo
ltage
V
BE
I
C
= -5 mA, V
CE
=-
5V -0.75
V
Tr
ansition freque
ncy
f
T
V
CE
= -5 V
, I
C
= -200mA
15 MHz
Collector Output cap
acitance
C
ob
V
CB
=-
10V, I
E
=0
,f=1MHz 35 pF
CLASSIFICATION OF h
FE
Rank
R O Y
Range
60-120 100-200 160-320
2
Rev. - 2.0
www.jscj-elec.com