TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
2SA1082 TRANSISTOR (PNP)
FEATURES
z Low Frequency Amplifier
MAXIMUM RATINGS (T
a
=25 unless other
w
is
e noted)
Symbol Parameter Value
Unit
V
CBO
Collector-Base Voltage
-120
V
V
CEO
Collector-Emitter Voltage -120
V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -0.1
A
P
C
Collector Power Dissipation 400
mW
R
ș JA
Thermal Resistance From Junction To Ambient 312
/W
Operation Junction and Storage Temperature Range
T
J
,T
stg
-55~+150
Equivalent Circuit
1
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7O-92
%XON 1000pcs/Bag
7
DSH 2000pcs/Box
6$
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
1
Rev. - 2.0
www.jscj-elec.com
7O-92
'(('()(*(*
a
T =25
unless otherwise specified
Parameter Symbol Test conditions Min Typ Max Unit
Co
llecto
r
-base breakdown voltage
V
(BR)CBO
I
C
=- 0.01mA,I
E
=0 -120 V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=-1
m
A,I
B
=
0
-120 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=-0.01mA,I
C
=0 -5 V
Co
llecto
r
cu
t-off current
I
CBO
V
CB
=-50V,I
E
=0 -0.1 ΚA
Emitter cut-off current
I
EBO
V
EB
=-2
V
,I
C
=0
-0.1 ΚA
DC current gain
h
FE
V
CE
=-12V, I
C
=-2mA 250 800
Co
llecto
r
-emitter satu
ration voltage
V
CE(sat)
I
C
=-10mA,I
B
=-1mA -0.2 V
Base-emitter voltage
V
BE
V
CE
=
-
12V
, I
C
=-
2
m
A
-0.6 V
Collector output capacitance C
ob
V
CB
=-10V,I
E
=0, f=1MHz
3.5 pF
Transition frequency
f
T
V
CE
=-12V,I
C
=-2mA 90 MHz
CLASSIFICATION OF h
FE
RA
N
K
D E
RANGE
250-500 400-800
2
Rev. - 2.0
www.jscj-elec.com