T
O – 92
1. EMITTER
2. COLLECTOR
3. BASE
2SA1083 TRANSISTOR (PNP)
FEATURES
z Low Frequency Low Noise Amplifier
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
1
Rev. - 2.0
www.jscj-elec.com
Collector-Base Voltage V
-Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current -Continuous -0.1
A
Collector Power Dissipation
mW
Operation Junction and Storage Temperature Range
T
J
,
-55 a
Κ
T
hermal Resist
ance Irom Junc
tion Wo
/W
Ambient
0-
-5
6$7$
2
7
6$
72 %XON SFV%DJ
7 ˝! SFV%R[
XXX=code
$ 'H
YLFHFRGH
6ROLGGRW *UHHQPROGLQJFRPSRXQGGHYLFH
LIQRQHWKHQRUPDOGHYLFH
Equivalent Circuit
'7'$$7$8$'$
a
T =25
unless otherwise specified
Parameter Symbol Test conditions Min Typ
Max Unit
Collector
-base breakdown voltage
V
(BR)CBO
I
C
= -0.01mA,I
E
=0 -60
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=-1mA,I
B
=0 -60
V
Emitter-bas
e breakdown voltage
V
(BR)EBO
I
E
=-0.01mA,I
C
=0 -5 V
Collector
cut-off current
I
CBO
V
CB
=-50V
,I
E
=0
-0
.1 ۷A
Emitter cut-off current
I
EBO
V
EB
=-2V,I
C
=0
-0.1 ۷A
DC curren
t g
ain
h
FE
V
CE
=-12V, I
C
=-2mA 250 800
Collector
-emitter saturation voltage
V
CE(sat)
I
C
=-10mA,I
B
=-1mA -0.2
V
Base-emitter voltage
V
BE
V
CE
=-12V
, I
C
=-2m
A
-0.6 V
Collector output capacitance C
ob
V
CB
=-10V,I
E
=0, f=1MHz
3.5 pF
Tra
nsition frequency
f
T
VCE=-12V,IC= -2mA 90 MHz
CLASSIFICATION OF h
FE
RANK
D E
RANGE
250-500 400-800
2
Rev. - 2.0
www.jscj-elec.com