TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
2SA1084 TRANSISTOR (PNP)
FEATURES
z Low Frequency Low Noise Amplifier
Collector-Base Voltage V
Collector-Emitter Voltage - V
Emitter-Base Voltage V
Collector Current -Continuous -0.1
A
Collector Power Dissipation
mW
Operation Junction and Storage Temperature Range
T
J
,
-55 a
T
hermal Resist
ance Irom Junction Wo
Ambient
��
/W
-0
-5
7
2
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Equivalent Circuit
1
Rev. - 2.0
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
a
T =25
unless otherwise specified
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage
V
(BR)CBO
I
C
= -0.01mA,I
E
=0 -90 V
Co
llector-emitter breakdown voltage
V
(BR)CEO
I
C
=-1mA,I
B
=0 -90 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=
-0.01mA,I
C
=0 -5
V
Collector cut-off current
I
CBO
V
CB
=-50V,I
E
=0 -0.1 A
Emitter cut-off current
I
EBO
V
EB
=-2V,I
C
=0 -0.1 A
DC current gain
h
FE
V
CE
=
-12V, I
C
=
-2mA 250 800
Collector-emitter saturation voltage
V
CE(sat)
I
C
=-10mA,I
B
=-1mA -0.2 V
Base-emitter v
oltage
V
BE
V
CE
=-12V, I
C
=-2mA
-0.6 V
Collector output capacitance C
ob
V
CB
=-10V,I
E
=0, f=1MHz
3.5 pF
Transition frequency
f
T
V
CE
=-12V,I
C
= -2mA 90 MHz
CLASSIFICATION OF h
FE
RANK D E
RA
NGE
250-500 400-800
2
Rev. - 2.0
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