2N3906
TRANSIST
OR (PNP)
FEA
T
URE
z PNP
silicon epitaxial planar transistor for switching and
Amplifier applications
z As complementary type, the NPN transistor 2N3904 is
Recommended
z This transistor is also available in the SOT
-23 case with
the type designation MMBT3906
T
O
-92
1.EMITTER
2.BASE
3. COLLECTOR
Equivalent Circuit
1
3906
2N
MAXIMUM RATINGS(T
a
=25ć unless otherwise noted)
Symbol Parameter Value
Unit
9
&%2
&ROOHFWRU%DVH9ROWDJH
9
9
&(2
&ROOHFWRU(PLWWHU
9
ROWDJH
9
9
(%2
(PLWWHU%DVH9ROWDJH
9
,
&
&ROOHFWRU&XU
U
HQW&
RQWLQX
RXV
$
3
&
&ROOHFWRU3RZHU'LVVLSDWLRQ
:
Operation Junction and Storage Temperature Range
ć
T
J
,7
VWJ
a
6ROLGGRW *UHHQPROGLQJFRPSRXQGGHYLFH
;;; &RGH
ORDERING INFORMATION
Part Number Package Packing Method Pack Quantity
TO-92 Bulk 1000pcs/Bag
TO-92 Tape 2000pcs/Box
2N3906
2N3906-TA
z
1 'HYLFHFRGH
LIQRQHWKHQRUPDOGHYLFH
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
1
Rev. - 2.0
www.jscj-elec.com
Parameter Symbol
Test conditions M T M U
Collector-base breakdown voltage
V
(BR)CBO
I
C
= -10A, I
E
=0 -40 V
Collector-emitter breakdown vo
ltage
V
(BR)CEO
I
C
=-1mA , I
B
=0 -40 V
Emitter-base breakdown volt
age
V
(BR)EBO
I
E
= -10A, I
C
=0 -5 V
Collector cut-o
ff
current
I
CBO
V
CB
= -40 V,I
E
=0 -0.1 A
Collector cut-off current
I
CEX
V
CE
= -30 V,V
EB(off)
=-3V -50 nA
Emitter cut-off current
I
EBO
V
EB
= -5 V , I
C
=0 -0.1 A
h
FE1
V
CE
=-1 V, I
C
= -10mA 100 400
h
FE2
V
CE
=-1 V, I
C
= -50mA 60
DC current gain
h
FE3
V
CE
=-2 V, I
C
= -100mA
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -50mA, I
B
= -5mA -0.4 V
Base-emitter saturation
v
o
lt
age
V
BE(sat)
I
C
= -50mA, I
B
= -5mA -0.95 V
T
r
ansition frequency
f
T
V
CE
=-20V
, I
C
= -10mA
f = 100MHz
250
MHz
Delay Time
td 35 ns
Rise T
i
me
tr
V
CC
=-3V
,V
BE
=-0.5V
,
I
C
=-10mA,I
B1
=-1mA
35 ns
Storage Time
ts 225 ns
Fall Time
tf
V
CC
=-3V
,Ic=-10mA
I
B1
=I
B2
=-1mA
75 ns
CLASSIFICATION OF h
FE1
Rank
Range
100-200 200-300 300-400
a
T =25
Я
unless otherwise specified
30
2
Rev. - 2.0
www.jscj-elec.com