SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
DN:T21312A1
http://www.microdiode.com Rev:2021A1 Page :1
SS32C THRU SS320C
Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 °C/10 seconds at terminals
Reverse Voltage - 20 to 200 Volts Forward Current - 3.0 Ampere
Mechanical Data
Case : JEDEC DO-214AB/SMC molded plastic body
Terminals : Solderable per MIL-STD-750,Method 2026
Polarity : Color band denotes cathode end Mounting
Position : Any
Weight
: 0.007 ounce, 0.25 grams
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Maximum Ratings And Electrical Characteristics
Parameter
SYMBOLS
UNITS
Marking Code
MDD
SS32C
MDD
SS33C
MDD
SS34C
MDD
SS35C
MDD
SS36C
MDD
SS38C
MDD
SS310C
MDD
SS3150C
MDD
SS320C
Maximum repetitive peak reverse voltage
VRRM
20 30 40 50 60 80 100 150 200
V
Maximum RMS voltage
V
RMS
14 21 28 35 42 56 70 105 140
V
Maximum DC blocking voltage
V
DC
20 30 40 50 60 80 100 150 200
V
Maximum average forward rectified current
at TL(see fig.1)
I
(AV)
3.0
A
Peak forward surge current
8.3ms single half sine-wave
superimposed onrated load (JEDEC Method)
I
FSM
80
A
Maximum instantaneous forward voltage at 3.0A
V
F
0.55 0.70 0.85 0.95
V
Maximum DCreverse current T
A
=25
℃
at rated DCb locking voltage
T
A
=100
℃
I
R
0.5
0.3
mA
5.0
3.0
Typical junction capacitance (NOTE 1)
C
J
450 350
pF
Typical thermal resistance (NOTE 2)
R
JA
50
℃/
W
Operating junction temperature range
T
J
-55to +125
℃
Storage temperature range
T
STG
-55 to +150
℃
Dimensions in inches a
nd (millimeters)
DO-214AB/SMC
0.060(1.52)
0.030(0.76)
0.320(8.13)
0.305(7.75)
0.012(0.305)
0.006(0.152)
0.008(0.203)MAX.
0.103(2.62)
0.079(2.06)
0.126 (3.20)
0.114 (2.90)
0.280(7.11)
0.260(6.60)
0.245(6.22)
0.220(5.59)
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 2.0”x2.0”(5.0x5.0cm) copper pad areas
Rev:2021A1 Page :2
Typical Characterisitics
The curve above is for reference only.
http://www.microdiode.com
SS32C THRU SS320C
Reverse Voltage - 20 to 200 Volts Forward Current - 3.0 Ampere
0.
1
0
0.4 1.4
Fig.3 Typical Forward Characteristic
In
staneous Forward Current (A)
In
staneous Forward Voltage (V)
1.
0
10
0.60.2 0.8 1.0 1.2 1.8
1.
6
SS32/SS34
SS36/SS38
SS310/SS312
SS3150/SS3200
20
10
01
30
40
50
20
60
80
70
Fig.5 Maximum Non-Repetitive Peak
Forward Surge Current
Peak Forward Surge Current (A)
10
N
umber of Cycles at 60Hz
Fi
g.2 Typical Reverse Characteristics
In
staneous Reverse Current ( μA)
20
40 60 80
0
T
J
=2
5°C
T
J
=1
00°C
Percent of Rated Peak Reverse Voltage（%）
100
10
0
10
1
10
2
10
3
10
4
T
J
=7
5°C
SS32/SS36
SS38~SS3200
0.
6
1.2
1.8
2.4
3.0
3.5
0.0
25 50
75
100 125 150
Fi
g.1 Forward Current Derating Curve
Av
erage Forward Current (A)
0.
01
100
1
10
100
Fig.6- Typical Transient Thermal Impedance
Tr
ansient Thermal Impedance（°C/W）
t, P
ulse Duration（sec）
0.1 1 10
Ca
se Temperature (°C)
Fig.4 Typical Junction Capacitance
Ju
nction Capacitance (pF)
Re
verse Voltage (V)
10
0.1 10
10
0
500
20
1001
10
00
T
J
=2
5°C
200
SS32~SS36
SS38~SS3200
90
8.
3 ms Single Half Sine Wave
(JEDEC Method)