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Description
The AR0521P0L is a bi-directional TVS diode, utilizing
leading monolithic silicon technology to provide fast re-
sponse time and low ESD clamping voltage, making this
device an ideal solution for protecting voltage sensitive
high-speed data lines. The AR0521P0L has an ultra-low
capacitance with a typical value at 0.25pF, and complies
with the IEC 61000-4-2 (ESD) standard with ±25kV air
and ±20kV contact discharge. It is assembled into an ul-
tra-small 0.6x0.3x0.3mm lead-free DFN package. The
small size, ultra-low capacitance and high ESD surge
protection make AR0521P0L an ideal choice to protect
cell phone, digital video interfaces, HDMI, DVI, USB2.0,
USB3.0, and other high speed ports.
Features
• Ultra small package: 0.6x0.3x0.3mm
• Ultra low capacitance: 0.25pF typical
• Ultra low leakage: nA level
• Operating voltage: 5V
• Low clamping voltage
• Complies with following standards:
– IEC 61000-4-2 (ESD) immunity test
Air discharge: ±25kV
Contact discharge: ±20kV
– IEC61000-4-5 (Lightning) 4A (8/20μs)
• RoHS Compliant
AR0521P0L
1-Line Ultra Low Capacitance Bi-directional TVS Diode
Part Number Packaging Reel Size
AR0521P0L 10000/Tape & Reel 7 inch
Package Dimensions Circuit and Pin Schematic
Dimensions and Pin Configuration
Mechanical Characteristics
• Package: DFN0603-2 (0.6×0.3×0.3mm)
• Case Material: “Green” Molding Compound.
• Moisture Sensitivity: Level 3 per J-STD-020
• Terminal Connections: See Diagram Below
• Marking Information: See Below
Applications
• Cellular Handsets and Accessories
• Display Ports
• MDDI Ports
• USB Ports
• Digital Visual Interface (DVI)
• PCI Express and Serial SATA Ports
Marking Information
Ordering Information
ZL
0.3
-
0.6
0.3
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Absolute Maximum Ratings (T
A
=25°C unless otherwise specified)
Electrical Characteristics (T
A
=25°C unless otherwise specified)
Parameter Symbol Value Unit
Peak Pulse Power (8/20µs) Ppk 100 W
Peak Pulse Current (8/20µs) IPP 4 A
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
VESD
±25
±20
KV
Operating Temperature Range TJ −55 to +125 °C
Storage Temperature Range Tstg −55 to +150 °C
Parameter Symbol Min Typ Max Unit Test Condition
Reverse Working Voltage VRWM 5 V
Breakdown Voltage VBR 6.5 9.5 V IT = 1mA
Reverse Leakage Current I
R
0.2 μA VRWM = 5V
Clamping Voltage VC 12 V IPP = 1A (8 x 20µs pulse)
Clamping Voltage VC 25 V IPP = 4A (8 x 20µs pulse)
Junction Capacitance CJ 0.25 pF VR = 0V, f = 1MHz
AR0521P0L