10-PF07NIA100S505-P927F53T
datasheet
Copyright Vincotech 1 06 Apr. 2020 / Revision 1
flowNPC 0 1200 V / 100 A
Features flow 0 12 mm housing
● Latest High Efficicent IGTB Technology
● Optimized Chipset for Active Power
● High Reactive Power Capability
Schematic
Target applications
● Solar Inverters
Types
�� 10-PF07NIA100S505-P927F53T
10-PF07NIA100S505-P927F53T
datasheet
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Copyright Vincotech 2 06 Apr. 2020 / Revision 1
Buck Switch
Collector-emitter voltage
V
CES
650 V
Collector current
I
C
T
j
= T
jmax
T
s
= 80 °C
92 A
Repetitive peak collector current
I
CRM
t
p
limited by T
jmax
300 A
Total power dissipation
P
tot
T
j
= T
jmax
T
s
= 80 °C
137 W
Gate-emitter voltage
V
GES
±20 V
Maximum junction temperature
T
jmax
175 °C
Buck Diode
Peak repetitive reverse voltage
V
RRM
650 V
Continuous (direct) forward current
I
F
T
j
= T
jmax
T
s
= 80 °C
79 A
Repetitive peak forward current
I
FRM
t
p
limited by T
jmax
200 A
Total power dissipation
P
tot
T
j
= T
jmax
T
s
= 80 °C
111 W
Maximum junction temperature
T
jmax
175 °C
Boost Switch
Collector-emitter voltage
V
CES
650 V
Collector current
I
C
T
j
= T
jmax
T
s
= 80 °C
88 A
Repetitive peak collector current
I
CRM
t
p
limited by T
jmax
225 A
Total power dissipation
P
tot
T
j
= T
jmax
T
s
= 80 °C
103 W
Gate-emitter voltage
V
GES
±20 V
Maximum junction temperature
T
jmax
175 °C