CHA3409-98F
Ref. : DSCHA34091020 - 20 Janv 21
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc Mosa ic - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-rf.com
25-45GHz Driver
GaAs Monolithic Microwave IC i n bare die
Description
The CHA3409-98F is a 3 stage monolithic
Medium Power Amplifier, which produces
23dB linear gain and 19dBm output power. It
includes a self-biasing on the first stage,
which reduces the i mpact of temperature and
technology variations.
It is wel l suited for a w ide range of application
from military to commercial communication
systems and test instrumentation.
This product is manufactured with a pHEMT
process, 0.15µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in bare die with BCB protection
layer.
Main Fea t ures
Output power & PAE vs frequency
■ Broadband performances: 25-45GHz
■ 19dBm Pout at 1dB compression
■ 23dB linear gain
■ 19% of PAE @ 1dBc
■ DC bias: Vd=4 Volt @ I d=100mA
■ Chip size 2 x1.3x0.1 (mm)
Main Electrical Characteristics
Tamb = +25°C, Vg
stg1
=-4V, Vd=4V, Idq=100mA
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
25
45
GHz
Gain
Linear Gain
23
dB
P-1dB
Output Power @1dB comp.
19
dBm
Psat
Saturated output power
20
dBm
PAE
PAE @1dB comp.
19
%
VD1
IN
VD23
OUT
VG2
VG3
GM4
GM5
-4V-5V
OR
12
14
16
18
20
22
24
26
28
30
32
34
12
13
14
15
16
17
18
19
20
21
22
23
24 26 28 30 32 34 36 38 40 42 44 46
P AE @ 2dBm (%)
Pout@ 2dBm & Pout@1dBc (dBm )
Frequen cy (GHz)
Pout @2dBm P1dBc PAE@2dBm
CHA3409-98F
25-45GHz Driver
Ref. : DSCHA34091020 - 20 Janv 21
2/10
Specifications subject to change without notice
Bât. Charmille - Parc Mosaic - 10, Av en ue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-rf.com
Specifications (CW mode)
Tamb=+25°C, Vd=+4.0V
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
25
45
GHz
Gain Linear Gain 23 dB
ΔG Gain variation in temperature ± 0.0 3 dB/°C
P
-1dB
Output power @ 1dB gain
compression
19 dBm
Psat Saturated Output Power 20 dBm
PAE PAE at saturatio n 19 %
NF
Noise figure
6.5
dB
RLin
Input Return Loss
-10
dB
RLout Output Return Loss -11 dB
Idq Quiescent Drain current 100 mA
Vg Gate voltage of 2
nd
& 3
rd
stage -0.4 V
Vg
stg1
Gate voltage of the 1
rst
stage
-4
V
These values are representative of measurement in test fixture with a bonding wire of
typically 0.25nH to 0.3nH.
Typical Bias Conditions
Tamb = +25°C
Symbol
Parameter
Values
Unit
GM4
GM4 OR GM5
DC Gate volta ge : 1
st
stage
-4
V
GM5
-5
V
G2
(1)
DC Gate volta ge : 2
nd
stage
-0.4
V
G3
(1)
DC Gate volta ge : 3
rd
stage
-0.4
V
D1
DC Drain volt age : 1
st
stage
4
V
D23
DC Drain volt age : 2
nd
& 3
rd
stage
4
V
(1)
Corresponding to Idq=100mA