Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad ar
eas
Item Sy
mbol
Unit Test Conditions
SK10
V
RRM
Average Forward Current
I
F(AV)
60HZ Half-sine wave,
Resistance load,TL(FIG.1)
10.0
Surge(Non-r
epetitive)Forward
Current
I
FSM
60Hz Half-sine wave ,
1 cycle , Ta =25℃
250
Junction
Temperature
T
J
℃ -55~+
125 -55~+150
St
orage Temperature
T
STG
℃ -55 ~
+150
Electrical Characteristics (T =25℃ Unl
ess otherwise specified)
20
30
40
50
60
80 100 150 200
V
RMS
14
21
28
35
56
70
10542
Rep
e
titive Pe
a
k
Reverse V
o
ltage
140
Maximum RMS Voltage
V
V
A
A
SK102 THRU SK1020
Limiting Values(Absolute Maximum Rating)
SMCG Plastic-Encapsulate Diodes
2 3
4 5 6 8 10 15 20
SMCG
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
1
www.jscj-elec.com
Features
10A
20V-200V
● High surge
current capability
Polarity: Color band denotes cathode
●
Applications
●
Rectifier
Marking
●
SK10X
X
:
From 2 To 20
●
●
VRRM
I
F(AV)
Rev. - 1.0
Item
Sy
mbol Unit Test Condition
SK 10
Peak F
orward Voltage
V
FM
V
I
FM
=10.0A
Peak Rev
e
rse Current
I
RRM1
mA
T
a
=25℃
I
RRM
2
T
a
=100
℃
20 10
Thermal
Resist
ance(Typical)
R
θ
J-A
/
℃
W
Betw
een junction and ambient
50
R
θ
J-L
Between junction and
lead
15
0.65
0.85
0.75
0.5
20
1510
8
6
5
4
3
2
0.1
V
RM
=V
RRM
0.95
Typical junction
capactiance
CJ
pF
Measured at 1.0MHz and applied
reverse voltage of 4.0 volts.
400
Schottky Rectifier Diodes