P3M06040K3 SiC MOS
N-Channel Enhancement Mode
nwww.pnjsemi.com
Ver. 2.0 Dec. 2020
Page 1 of 10
SiC MOS P3M06040K3
N-Channel Enhancement Mode
Features
• Qualified to AEC-Q101
• High Blocking Voltage with Low On-Resistance
• High-Frequency Operation
• Ultra-Small Q
gd
• 100% UIS tested
Standards Benefits
• Improve System Efficiency
• Increase Power Density
• Reduce Heat Sink Requirements
• Reduction of System Cost
Application
• Solar Inverters
• EV Battery Chargers
• High Voltage DC/DC Converters
• Switch Mode Power Supplies
Order Information
Part number
Package
Marking
P3M06040K3
TO-247-3
P3M06040K3
V
RRM
=
650
V
I
D
=
61
A
I
D
(100℃)
=
42
A
R
DS(on)
=
40
mΩ
Gate
1
Drain
2
Source
3
TO-247-3
D
nwww.pnjsemi.com
Ver. 2.0 Dec. 2020
Page 2 of 10
P3M06040K3 SiC MOS
N-Channel Enhancement Mode
Contents
Features ........................................................................................................ 1
Standards Benefits ................................................................................... 1
Application .................................................................................................. 1
Order Information .................................................................................... 1
Contents..................................................................................... 2
1. Maximum Ratings ................................................................................ 3
2. Electrical Characteristics .................................................................... 4
3. Reverse Diode Characteristics ......................................................... 5
4. Thermal Characteristics ...................................................................... 6
5. Typical Performance ........................................................................... 6
6. Package Outlines ............................................................................... 10