RBR1VWM40A
Schottky Barrier Diode
Data sheet
●Outline
V
R
40 V
I
o
1 A
I
FSM
20 A
●Features
●Inner Circuit
High reliability
Small power mold type
Low V
F
●Application
●Packaging Specifications
General rectification Packing Embossed Tape
Reel Size(mm) 180
Taping Width(mm) 8
●Structure Quantity(pcs) 3000
Silicon epitaxial planar Taping Code TR
Marking 14
●Absolute Maximum Ratings
(T
c
=25ºC unless otherwise specified)
Parameter Symbol Conditions Limits Unit
Repetitive peak reverse voltage
V
RM
Duty≦0.5 40 V
Reverse voltage
V
R
Reverse direct voltage 40 V
Average rectified forward current
I
o
Glass epoxy mounted、
60Hz half sin waveform、resistive load、
T
c
=120℃ Max.
1 A
Peak forward surge current
I
FSM
60Hz half sin waveform、Non-repetitive、
one cycle、T
a
=25℃
20 A
Junction temperature
(1)
T
j
- 150 ℃
Storage temperature
T
stg
- -55 ～ 150 ℃
Note(1) To avoid occurrence of thermal runaway， actual board is to be designed to fulfill dP
d
/dT
j
<1/R
th(j-a)
.
●Characteristics
(T
j
=25ºC unless otherwise specified)
Parameter Symbol Conditions Min. Typ. Max. Unit
Forward voltage
V
F
I
F
=1A
- - 0.52 V
Reverse current
I
R
V
R
=40V
- - 50 μA
Attention
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2020/09/16_Rev.003
