N-Channel Enhancement Mode Power MOSFET
General Features
V
DS
= 60V,I
D
= 0.3A
R
DS(ON)
< 3Ω @ V
GS
=5V
R
DS(ON)
< 2Ω @ V
GS
=10V
ESD Rating
HBM 2300V
High power and current handing capability
Lead free product is acquired
Surface mount package
Application
Direct logic-level interface: TTL/CMOS
Drivers: relays, solenoids, lamps, hammers,display,
memories, transistors, etc.
Battery operated systems
Solid-state relays
Schematic diagram
Marking a
nd pin assignment
SOT-23 top view
Package Marking And Ordering Information
Device Marking Device Device Package Reel Size Tape width Quantity
H702K 2N7002K SOT-23 Ø180mm 8 mm 3000 units
Absolute Maximum Ratings (T
A
=25 unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
60 V
Gate-Source Voltage
V
GS
±20 V
T
A
=25 0.3
Continuous Drain Current (T
J
=150 )
T
A
=100
I
D
0.19
A
Drain Current-Pulsed
(Note 1)
I
DM
0.8 A
Maximum Power Dissipation
P
D
0.35 W
Operating Junction and Storage Temperature Range
T
J
,T
STG
-55 To 150
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
R
θJA
350 /W
2N7002KV
Halogen-free
P/N suffix V means AEC-Q101 qualified, e.g:2N7002KV
H702K
2020-11/15
REV:O
Electrical Characteristics (T
A
=25ćunless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V I
D
=250μA 60 68 - V
Zero Gate Voltage Drain Current I
DSS
V
DS
=60V,V
GS
=0V - - 1 μA
V
GS
=±10V,V
DS
=0V - ±100 ±500 nA
Gate-Body Leakage Current I
GSS
V
GS
=±20V,V
DS
=0V - ±4 ±10 uA
On Characteristics
(Note 3)
Gate Threshold Voltage V
GS(th)
V
DS
=V
GS
,I
D
=250μA
V
GS
=5V, I
D
=0.4A - 1.3 3 Ω
Drain-Source On-State Resistance R
DS(ON)
V
GS
=10V, I
D
=0.5A - 1 2 Ω
Forward Transconductance g
FS
V
DS
=10V,I
D
=0.2A 0.1 - - S
Dynamic Characteristics
(Note4)
Input Capacitance C
lss
- 21 50 PF
Output Capacitance C
oss
- 11 25 PF
Reverse Transfer Capacitance C
rss
V
DS
=25V,V
GS
=0V,
F=1.0MHz
- 4.2 5 PF
Switching Characteristics
(Note 4)
Turn-on Delay Time t
d(on)
- 10 - nS
Turn-on Rise Time t
r
- 50 - nS
Turn-Off Delay Time t
d(off)
- 17 - nS
Turn-Off Fall Time t
f
V
DD
=30V,I
D
=0.2A
V
GS
=10V,R
GEN
=10Ω
- 10 - nS
Total Gate Charge Q
g
V
DS
=10V,I
D
=0.3A,
V
GS
=4.5V
- 1.7 3 nC
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
V
SD
V
GS
=0V,I
S
=0.2A - - 1.3 V
Diode Forward Current
(Note 2)
I
S
- - 0.2 A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 . %
4. Guaranteed by design, not subject to production
" " " " " " "
V
1
1.7
1.9