650V/20A Silicon Carbide Power Schottky Barrier Bare Die
Features
• Zero reverse recovery current
• Zero forward recovery voltage
• Temperature independent switching behaviour
�� High temperature operation
• High frequency operation
Maximum Ratings
GW3-S06520 ©2020 Global Power Technology Company Ltd - ALL RIGHTS RESERVED
Key Characteristics
V
RRM
650
V
I
F
20
A
Q
C
56
nC
Part No.
Anode
Cathode
GW3-S06520
Al
Ag
Parameter
Symbol
Test Condition
Value
Unit
Repetitive Peak Reverse
Voltage
V
RRM
650
V
Surge Peak Reverse
Voltage
V
RSM
650
V
DC Blocking Voltage
V
DC
650
V
Continuous Forward
Current
I
F
T
C
=25℃
20
A
Repetitive Peak Forward
Surge Current
I
FRM
T
C
=25℃, tp=10ms ， Half sine
Pulse，D=0.3
100
A
Non-repetitive Peak
Forward Surge Current
I
FSM
T
C
=25℃, tp=10ms ， Half Sine
Wave
175
A
Operating Junction
T
j
-55~175
˚C
Storage Temperature
T
stg
-55~175
˚C
GW3-S06520
Datasheet
V2020.A.0
GW3-S06520 650V/20A Silicon Carbide Power Schottky Barrier Bare Die
Electrical Characteristics
Performance Graphs
1) Forward IV characteristics as a function of Tj : 2) Reverse IV characteristics as a function of Tj :
GW3-S06520 ©2020 Global Power Technology Company Ltd - ALL RIGHTS RESERVED
Parameter
Symbol
Test Conditions
Numerical
Unit
Typ.
Max.
Forward Voltage
V
F
I
F
=20A, T
j
=25℃
1.52
1.7
V
I
F
=20A, T
j
=175℃
1.75
2.5
Reverse Current
I
R
V
R
=650V, T
j
=25℃
1
50
µA
V
R
=650V, T
j
=175℃
5
100
Total Capacitive Charge
Q
C
V
R
=400V, T
j
=150℃
dVVCQc
VR
)(
0
56
-
nC
Total Capacitance
C
V
R
=0V, T
j
=25℃, f=1MHZ
1077
1300
pF
V
R
=200V, T
j
=25℃, f=1MHZ
101
120
V
R
=400V, T
j
=25℃, f=1MHZ
97.5
108