650V/6A Silicon Carbide Power Schottky Barrier Bare Die
Features
• Zero reverse recovery current
• Zero forward recovery voltage
• Temperature independent switching behaviour
• High temperature operation
• High frequency operation
Maximum Ratings
GW3-S06506 ©2020 Global Power Technology Company Ltd - ALL RIGHTS RESERVED
Key Characteristics
V
RRM
650
V
I
F
6
A
Q
C
23
nC
Part No.
Anode
Cathode
GW3-S06506
Al
Ag
Parameter
Symbol
Test Condition
Value
Unit
Repetitive Peak Reverse
Voltage
V
RRM
650
V
Surge Peak Reverse
Voltage
V
RSM
650
V
DC Blocking Voltage
V
DC
650
V
Continuous Forward
Current
I
F
T
j
=25℃
6
A
Repetitive Peak Forward
Surge Current
I
FRM
T
C
=25℃, tp=10ms ， Half sine
Pulse，D=0.3
30
A
Non-repetitive Peak
Forward Surge Current
I
FSM
T
C
=25℃, tp=10ms ， Half Sine
Wave
78
A
Operating Junction
T
j
-55℃ to 175℃
˚C
Storage Temperature
T
stg
-55℃ to 175℃
˚C
GW3-S06506
Datasheet
V2020.A.0
GW3-S06506 650V/6A Silicon Carbide Power Schottky Barrier Bare Die
Electrical Characteristics
Performance Graphs
1) Forward IV characteristics as a function of Tj : 2) Reverse IV characteristics as a function of Tj :
GW3-S06506 ©2020 Global Power Technology Company Ltd - ALL RIGHTS RESERVED
Parameter
Symbol
Test Conditions
Numerical
Unit
Typ.
Max.
Forward Voltage
V
F
I
F
=6A, T
j
=25℃
1.43
1.7
V
I
F
=6A, T
j
=175℃
1.64
2.0
Reverse Current
I
R
V
R
=650V, T
j
=25℃
0.2
50
µA
V
R
=650V, T
j
=175℃
2.5
100
Total Capacitive Charge
Q
C
V
R
=400V, T
j
=150℃
dVVCQc
VR
)(
0
23
-
nC
Total Capacitance
C
V
R
=0V, T
j
=25℃, f=1MHZ
424
434
pF
V
R
=200V, T
j
=25℃, f=1MHZ
44
45
V
R
=400V, T
j
=25℃, f=1MHZ
42.5
43