650V/2A Silicon Carbide Power Schottky Barrier Bare Die
Features
• Zero reverse recovery current
• Zero forward recovery voltage
• Temperature independent switching behaviour
• High temperature operation
• High frequency operation
Maximum Ratings
GW3-S06502 ©2020 Global Power Technology Company Ltd - ALL RIGHTS RESERVED
Key Characteristics
V
RRM
650
V
I
F
2
A
Q
C
8
nC
Part No.
Anode
Cathode
GW3-S06502
Al
Ag
Parameter
Symbol
Test Condition
Value
Unit
Repetitive Peak Reverse
Voltage
V
RRM
650
V
Surge Peak Reverse
Voltage
V
RSM
650
V
DC Blocking Voltage
V
DC
650
V
Continuous Forward
Current
I
F
T
C
=25℃
2
A
Repetitive Peak Forward
Surge Current
I
FRM
T
C
=25℃, tp=10ms ， Half sine
Pulse，D=0.3
12
A
Non-repetitive Peak
Forward Surge Current
I
FSM
T
C
=25℃, tp=10ms ， Half Sine
Wave
30
A
Operating Junction
T
j
-55℃ to 175℃
˚C
Storage Temperature
T
stg
-55℃ to 175℃
˚C
GW3-S06502
Datasheet
V2020.A.0
GW3-S06502 650V/2A Silicon Carbide Power Schottky Barrier Bare Die
Electrical Characteristics
Performance Graphs
1) Forward IV characteristics as a function of Tj : 2) Reverse IV characteristics as a function of Tj :
GW3-S06502 ©2020 Global Power Technology Company Ltd - ALL RIGHTS RESERVED
Parameter
Symbol
Test Conditions
Numerical
Unit
Typ.
Max.
Forward Voltage
V
F
I
F
=2A, T
j
=25℃
1.37
1.7
V
I
F
=2A, T
j
=175℃
1.67
2
Reverse Current
I
R
V
R
=650V, T
j
=25℃
0.04
50
µA
V
R
=650V, T
j
=175℃
0.4
100
Total Capacitive Charge
Q
C
V
R
=400V, T
j
=150℃
dVVCQc
VR
)(
0
8
-
nC
Total Capacitance
C
V
R
=0V, T
j
=25℃, f=1MHZ
123
150
pF
V
R
=200V, T
j
=25℃, f=1MHZ
12
20
V
R
=400V, T
j
=25℃, f=1MHZ
13
30