SCS308AH
SiC Schottky Barrier Diode
*1 T
c
=100°C, T
j
=150°C, Duty cycle=10% *2 T
c
=25°C
PW=10ms sinusoidal, T
j
=150°C
Surge non-
repetitive forward
current
PW=10ms sinusoidal, T
j
=25°C
Range of storage temperature
lAbsolute maximum ratings (T
j
= 25°C)
Reverse voltage (repetitive peak)
Continuous forward current
Repetitive peak forward current
Basic ordering unit (pcs)
Silicon carbide epitaxial planar type
3) High-speed switching possible
lPackaging specifications
2) Reduced temperature dependence
4) High surge current capability
(1) Cathode
(2) Cathode
(3) Anode
(1)
(2) (3)
(3)
(2)
(1)
*
1
*
2
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
1/5
TSQ50221-SCS308AH
18.Nov.2019-Rev.002
Datasheet