P50LF10SN

Power MOSFETs

100V, 50A, N-channel

Feature

・N-channel

・Small SMD

・Large Current

・Low Ron

・10V Gate Drive

・Low Capacitance

・Halogen free

・Pb free terminal

・RoHS:Yes

OUTLINE

Package (House Name): LF

Package (JEDEC Code): MO-235B similar

Equivalent circuit

Absolute Maximum Ratings (unless otherwise specified : Tc=25℃)

Item Symbol Conditions Ratings Unit

Storage temperature Tstg -55 to 175 ℃

Channel tempertature Tch -55 to 175 ℃

Drain-source voltage V 100 V

Gate-source voltage V ±20 V

Continuous drain current(DC) I 50 A

Continuous drain current(Peak) I Pulse width 10μs, duty=1/100 200 A

Total power dissipation P 217 W

Single avalanche current I Starting Tch=25℃ Tch≦150℃ 35 A

Single avalanche energy E Starting Tch=25℃ Tch≦150℃ 140 mJ

※︓See the original Specifications

DSS

GSS

Shindengen Electric Manufacturing Co., Ltd. 1/7 P50LF10SN_Rev.02(2020.07)

Electrical Characteristics (unless otherwise specified : Tc=25℃)

Item Symbol Conditions

Ratings

Unit

MIN TYP MAX

Drain-Source breakdown

voltage

V ID=1mA, VGS=0V 100 V

Zero gate voltage drain current I VDS=100V, VGS=0V 1 μA

Gate-source leakage current I VGS=±20V, VDS=0V ±0.1 μA

Forward transconductance g ID=25A, VDS=10V 15 S

Static drain-source on-state

resistance

R ID=25A, VGS=10V 0.0083 0.0104 Ω

Gate threshold voltage Vth ID=1mA, VDS=10V 2 3 4 V

Source-drain diode forward

voltage

V IS=50A, VGS=0V 1.5 V

Thermal resistance Rth(j-c) Junction to case, with heatsink 0.69 ℃/W

Total gate charge Qg VDD=80V, VGS=10V, ID=50A 80 nC

Gate to source charge Qgs VDD=80V, VGS=10V, ID=50A 21 nC

Gate to drain charge Qgd VDD=80V, VGS=10V, ID=50A 28 nC

Input capacitance Ciss VDS=25V, VGS=0V, f=1MHz 4130 pF

Reverce transfer capacitnce Crss VDS=25V, VGS=0V, f=1MHz 176 pF

Output capacitance Coss VDS=25V, VGS=0V, f=1MHz 370 pF

Turn-on delay time td(on)

ID=25A, RL=2.00Ω, VDD=50V, Rg=0Ω,

VGS(+)=10V, VGS(-)=0V

7 ns

Rise time tr

ID=25A, RL=2.00Ω, VDD=50V, Rg=0Ω,

VGS(+)=10V, VGS(-)=0V

11 ns

Turn-off delay time td(off)

ID=25A, RL=2.00Ω, VDD=50V, Rg=0Ω,

VGS(+)=10V, VGS(-)=0V

57 ns

Fall time tf

ID=25A, RL=2.00Ω, VDD=50V, Rg=0Ω,

VGS(+)=10V, VGS(-)=0V

22 ns

Diode reverse recovery time trr IF=50A, VGS=0V, di/dt=100A/μs 58 ns

Diode reverse recovery charge Qrr IF=50A, VGS=0V, di/dt=100A/μs 123 nC

※︓See the original Specifications

(BR)DSS

DSS

GSS

DS(ON)

Shindengen Electric Manufacturing Co., Ltd. 2/7 P50LF10SN_Rev.02(2020.07)