eGaN® FET DATASHEET
EPC2001C
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 | | 1
EPC2001C eGaN® FETs are supplied only in
passivated die form with solder bars
Applications
• High-Frequency DC-DC Conversion
• Industrial Automation
• Synchronous Rectication
• Class-D Audio
• Low Inductance Motor Drives
Benets
• Ultra High Eciency
• Ultra Low Switching and Conduction Losses
• Zero Q
RR
• Ultra Small Footprint
EFFICIENT POWER CONVERSION
HAL
EPC2001C – Enhancement Mode Power Transistor
V
DS
, 100 V
R
DS(on)
, 7 mΩ
I
D
, 36 A
G
D
S
Maximum Ratings
PARAMETER VALUE UNIT
V
DS
Drain-to-Source Voltage (Continuous) 100
V
Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 120
I
D
Continuous (T
A
= 25°C, R
θJA
= 7.3) 36
A
Pulsed (25°C, T
PULSE
= 300 µs) 150
V
GS
Gate-to-Source Voltage 6
V
Gate-to-Source Voltage -4
T
J
Operating Temperature -40 to 150
°C
T
STG
Storage Temperature -40 to 150
Thermal Characteristics
PARAMETER TYP UNIT
R
θJC
Thermal Resistance, Junction-to-Case 1
°C/W R
θJB
Thermal Resistance, Junction-to-Board 2
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1) 54
Note 1: R
θJA
is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
All measurements were done with substrate connected to source.
Static Characteristics (T
J
= 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BV
DSS
Drain-to-Source Voltage V
GS
= 0 V, I
D
= 300 μA 100 V
I
DSS
Drain-Source Leakage V
GS
= 0 V, V
DS
= 80 V 100 250 µA
I
GSS
Gate-to-Source Forward Leakage V
GS
= 5 V 1 5
mA
Gate-to-Source Reverse Leakage V
GS
= -4 V 0.1 0.25
V
GS(TH)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 5 mA 0.8 1.4 2.5 V
R
DS(on)
Drain-Source On Resistance V
GS
= 5 V, I
D
= 25 A 5.6 7 mΩ
V
SD
Source-Drain Forward Voltage I
S
= 0.5 A, V
GS
= 0 V 1.7 V
Gallium Nitride’s exceptionally high electron mobility and low temperature coecient allows very
low R
DS(on)
, while its lateral device structure and majority carrier diode provide exceptionally low Q
G
and zero Q
RR
. The end result is a device that can handle tasks where very high switching frequency,
and low on-time are benecial as well as those where on-state losses dominate.
eGaN® FET DATASHEET
EPC2001C
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 | | 2
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
150
120
90
60
30
0
1 1.5 2 2.5 3
V
GS
GS
GS
GS
= 5 V
V
= 4 V
V
= 3 V
V
= 2 V
I
D
– Drain Current (A)
V
GS
– Gate-to-Source Voltage (V)
150
120
90
60
30
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
R
DS(on)
– Drain to Source Resistance (mΩ)
R
DS(on)
– Drain to Source Resistance (mΩ)
V
GS
– Gate-to-Source Voltage (V)
20
25
15
10
5
0
2.5 2 3 3.5 4 4.5 5
V
GS
– Gate-to-Source Voltage (V)
25
15
20
10
5
0
2.5 2 3 3.5 4 4.5 5
I
D
= 25 A
25˚C
125˚C
Figure 1: Typical Output Characteristics at 25°C
Figure 2: Transfer Characteristics
Figure 3: R
DS(on)
vs. V
GS
for Various Currents Figure 4: R
DS(on)
vs. V
GS
for Various Temperatures
0 0.5
I
D
= 10 A
I
D
= 20 A
I
D
= 40 A
I
D
= 80 A
V
DS
= 3 V
25°C
125°C
Dynamic Characteristics (T
J
= 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
C
ISS
Input Capacitance
V
DS
= 50 V, V
GS
= 0 V
770 900
pFC
OSS
Output Capacitance
430 650
C
RSS
Reverse Transfer Capacitance
10 15
R
G
Gate Resistance
0.3 Ω
Q
G
Total Gate Charge
V
DS
= 50 V, V
GS
= 5 V, I
D
= 25 A 7.5 9
nC
Q
GS
Gate-to-Source Charge
V
DS
= 50 V, I
D
= 25 A
2.4
Q
GD
Gate-to-Drain Charge
1.2 2
Q
G(TH)
Gate Charge at Threshold
1.6
Q
OSS
Output Charge
V
DS
= 50 V, V
GS
= 0 V 31 45
Q
RR
Source-Drain Recovery Charge
0
All measurements were done with substrate connected to source.
Note 2: C
OSS(ER)
is a xed capacitance that gives the same stored energy as C
OSS
while V
DS
is rising from 0 to 50% BV
DSS
.
Note 3: C
OSS(TR)
is a xed capacitance that gives the same charging time as C
OSS
while V
DS
is rising from 0 to 50% BV
DSS
.