CHA4314-98F
Ref. : DSCHA43140231 - 18 Aug 20
1/23
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
4.7-11.3G H z Med ium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA4314-98F is a two stage monolithic
medium power amplifier circuit.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.1
5µm gate length, via holes
through the sub
strate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Fea t ures
■ Broadband performances: 4.7-11.3GHz
■ Linear Gain: 19dB
■ Pout@1dB gain compression: 26dBm
■ OIP3: 34dBm
■ PAE@1dB gain compression: 31%
■ DC bias: Vd=5Volt@Id=180mA
■ Chip size 3.45x1.6x0.07mm
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
4.7
11.3
GHz
Gain
Linear Gain
19
dB
Pout
Output Power @1dB comp.
26
dBm
Pae
PAE @1dB comp.
31
%
OIP3
Third order output intercept point
34
dBm
In Out
V+
V-
STG1 STG2
CHA4314-98F
4.7-11.3GHz Medium Power Amplifier
Ref. : DSCHA43140231 - 18 Aug 20
2/23
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
Specifications
Tamb.= +25°C, Vd = +5V / IDq = 180mA CW mode
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
4.7
11.3
GHz
Gain
Linear Gain
19
dB
Gain
ripple
Peak to peak variation of the linear gain in
the frequency range
0.7
dB
Gain_T
Linear gain variation versus temperature at
fixed Vg
0.016
dB/°C
RLin
Input Return Loss
12
dB
RLout
Output Return Loss
12
dB
NF
Noise figure
3.5
dB
OIP3
Output third order interception point
34
dBm
P
-1dB
Output Power @1dB gain compression
26
dBm
P
-3dB
Output Power @3dB gain compression
27
dBm
PAE
-1dB
Power added efficiency @1dB gain comp.
31
%
PAE
-3dB
Power added efficiency @3dB gain comp.
34
%
Id
-1dB
Drain current @1dB gain compression
260
mA
Id
-3dB
Drain current @3dB gain compression
300
mA
Vd1,2
Drain supply voltage
5
V
Id
Drain quiescent current
180
mA
Vg
Gate supply voltage
-0.7
V
These values are representative of measurements in test fixture with bonding wires at the
RF ports.
W ire bonding at RF accesses: 0.4nH, typically.