RELIABILITY REPORT
POWER THE FUTURE
2
www.innoscience.com.cn
1. Product Information
Product
INN650D02
Package
DFN 8X8
Process
Technology
GaN on Silicon
Report Date
Mar./05/2020
2. Reliability Tests
Innoscience’s E-mode GaN FET were subjected to a variety of reliability tests. These tests included:
High Temperature Reverse Bias (HTRB)
Parts are subjected to 80% of the rated drain-source voltage at the maximum rated temperature for
a stress period of 1000 hours. The testing was done in accordance with the JEDEC Standard JESD22-
A108.
Pass criteria: All units must pass the min/max limits of the datasheet.
Test
Items
Part Number
BV Rating
Test Conditions
Fail #
Sample Size
Duration
(V)
(SS x Lot)
HTRB
INN650D02
650V
T=150ºC, V
DS
= 520 V
0
77 x 3
1000 Hrs
High Temperature Gate Bias (HTGB)
Parts are subjected to 6.0 V gate-source bias at the maximum rated temperature for a stress period
of 1000 hours. The testing was done in accordance with the JEDEC Standard JESD22-A108.
Pass criteria: All units must pass the min/max limits of the datasheet.
Test
Items
Part Number
BV Rating
Test Conditions
Fail #
Sample Size
Duration
(V)
(SS x Lot)
HTGB
INN650D02
650V
T=150ºC, V
GS
= 6.0 V
0
77 x 3
1000 Hrs