TVS Diode Array (SPA
®
Diodes)
Enhanced ESD Discrete TVS Series
- SP3530
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/19/19
Applications
• Ultra-high speed data
lines
• USB 3.1, 3.0, 2.0
• HDMI 2.0, 1.4a, 1.3
• DisplayPort
(TM)
V-by-One
®
• LVDS interfaces
Consumer, mobile and
portable electronics
Tablet PC and external
storage with high speed
interfaces
• Applications requiring
high ESD performance in
small packages
Pinout
Functional Block Diagram
1
2
1
2
Unidirectional Bidirectional
SP3530 0.3pF 22kV unidirectional TVS diode
Description
This SP3530 unidirectional diode provides a high level of
protection for electronic equipment that may be exposed
to electrostatic discharges (ESD). This robust component
can safely absorb repetitive ESD strikes above the
maximum level specified in the IEC 61000-4-2 international
standard (±8kV contact discharge) without performance
degradation. The extremely low loading capacitance also
makes it ideal for protecting high speed signal pins such as
V-By-One
®
, HDMI, USB3.0, USB2.0, and IEEE 1394.
Features
ELVRoHS
Pb
GREEN
• ESD, IEC 61000-4-2,
±22kV contact, ±22kV air
• EFT, IEC 61000-4-4, 40A
(t
P
=5/50ns)
• Lightning, IEC 61000-
4-5, 2
nd
edition, 2.5A
(t
P
=8/20μs)
• Low capacitance of 0.3pF
(TYP) at 3GHz
• Low profile 0201 DFN
packages and SOD882
packages
• Facilitates excellent signal
integrity
• ELV Compliant
• AEC-Q101 qualified
• Halogen free, Lead free
and RoHS compliant
• Moisture Sensitivity Level
(MSL -1)
Bottom View
1
2
1
2
SOD8820201 DFN
TVS Diode Array (SPA
®
Diodes)
Enhanced ESD Discrete TVS Series
- SP3530
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/19/19
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those
indicated in the operational sections of this specification is not implied.
Absolute Maximum Ratings
Symbol Parameter Value Units
I
PP
Peak Current (t
p
=8/20μs) 2.5 A
T
OP
Operating Temperature -40 to 125 °C
T
STOR
Storage Temperature -55 to 150 °C
Electrical Characteristics - (T
OP
=25°C)
Parameter Test Conditions Min Ty p Max Units
Input Capacitance @ V
R
= 0V, f = 3GHz 0.30 pF
Breakdown Voltage V
BR
@ I
T
=1mA 8.2 V
Reverse Working Voltage I
R
≤1μA 7. 0 V
Reverse Leakage Current I
L
@ V
RWM
=5.0V 0.02 1 μA
Dynamic Resistance
2
TLP, t
P
=100ns, I/O to GND 0.58 Ω
Clamping Voltage
1
V
CL
@ I
PP
=2.5A 11. 8 V
ESD Withstand Voltage
1
IEC 61000-4-2 (Contact) ±22
kV
IEC 61000-4-2 (Air) ±22
Note:
1. Parameter is guaranteed by design and/or component characterization.
2. Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns
Clamping Voltage vs I
PP
Peak Pulse Current - I
PP
(A)
Clamp Voltage (V
C
)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
11.5 22.5
8/20μs Pulse Waveform
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
110%
0.0 5.0 10.0 15.0 20.0 25.0 30.0
Time (μs)
Percent of I
PP