z Schottky Barrier Chip
z Guardring for Overvoltage Protection
z Low Power Loss,High Efficiency
z High Surge Current Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
MAXIMUM RATINGS ( T
a
=25℃ unless otherwise noted )
Symbol Parameter Value Unit
V
RRM
Peak repetitive reverse voltage
V
RWM
Working peak reverse voltage
V
R
DC blocking voltage
100 V
V
R(RMS)
RMS reverse voltage 70 V
I
O
Average rectified output current 30
A
I
FSM
Non-repetitive peak forward surge current
8.3ms half sine wave
200 A
P
D
Power dissipation 3.5 W
R
ΘJA
Thermal resistance from junction to ambient 29
℃/W
T
j
Junction temperature
125
℃
T
stg
Storage temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min
Typ
Max Unit
Reverse voltage
V
(BR)
I
R
=1mA 100 V
Reverse current
I
R
V
R
=100V 0.1 mA
V
F1
I
F
=15A 1
V
Forward voltage
V
F2
* I
F
=30A 1.05
V
Typical total capacitance
C
tot
V
R
=4V,f=1MHz 300 pF
*Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
MBR30100PT SCHOTTKY BARRIER RECTIFIER
TO-3P
FEATURES
1. ANODE
2. CATHODE
3. ANOD
E
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-3P Plastic-Encapsulate Diodes
1
Rev. - 1.0
www.jscj-elec.com
0 100 200 300 400 500 600 700 800 900 1000
1
10
100
1000
10000
20 40 60 80 100
0.1
1
10
100
1000
0 25 50 75 100 125
0
1
2
3
4
5
0 5 10 15 20 25 30 35
0
100
200
300
400
500
600
700
800
900
1000
30000
1
Forward Characteristics
FORWARD VOLTAGE V
F
(mV)
FORWARD CURRENT I
F
(mA)
T
a
=
2
5
℃
T
a
=1
0
0
℃
Rev erse Characteristics
T
a
=25
℃
T
a
=100
℃
REVERSE CURRENT I
R
(uA)
REVERSE VOLTAGE V
R
(V)
Power D e rating C urve
POWER DISSIPATION P
D
(W)
AMBIENT TEMPERATURE T
a
( )℃
T
a
=25℃
f=1MHz
Capacitance Characteristics
REVERSE VOLTAGE V
R
(V)
CAPACITANCE BETWEEN TERMINALS
C
T
(pF)
Typical Characteristics
2
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Rev. - 1.0