MMBD4148AT/CT/ST
SWITCHING DI
ODE
FEATURES
z Small Surface Mounting Type
z For General Purpose Switching Applications
z Fast Switching Speed
z High Conductance
MMBD4148AT MMBD4148CT MMBD4148ST
MARKING: KA3 MARKING: KA4 MARKING:KA5
MAXIMUM RATINGS ( T
a
=25
℃
unless otherwise noted )
Symbol Parameter Value Unit
V
RM
No-Repetitive Peak Reverse Voltage 100 V
V
RWM
Working Peak Reverse Voltage 75 V
V
R(RMS)
RMS Reverse Voltage 53 V
I
O
Continuous Forward Current
150
mA
I
FSM
Non-repetitive Peak Forward Surge C
urrent @ t=8.3ms
2
A
P
D
Po
wer Dissipation 150 mW
R
θJA
T
hermal Resist
ance from Jun
c
tion to
Ambie
n
t 833
℃/W
T
j
,T
stg
Operation Junction and Storage Temperature Range
℃
-55~+150
ELECTRICAL
CHARA
CTERISTICS(T
a
=25
℃
unles
s
other
w
ise
specified)
Parameter Symbol Test conditions
Min
Typ
Max Unit
Reverse voltage
V
(BR)
I
R
=10uA 75 V
V
R
=75V 1 µA
Reverse curre nt
I
R
V
R
=20V 25 nA
I
F
=1mA 0.715 V
I
F
=10mA 0.855 V
I
F
=50mA 1 V
Forward voltage
V
F
I
F
=150mA 1.25 V
Total capacitance
C
tot
V
R
=0,f=1MHz 2 pF
Reverse recovery time
t
rr
I
F
= I
R
=10mA, Irr=0.1×I
R
,R
L
=100Ω
4 ns
SOT-523
KA3
KA4
KA5
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diodes
1
Rev. - 2.0
www.jscj-elec.com
Typical Characteristics
048121620
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100 125 150
0
50
100
150
200
0.0
0.4 0.8 1.2 1.6
0.1
1
10
100
02
04060
1
10
100
1000
10000
T
a
=25
℃
f=1MHz
Capacitance C h aracteri
stics
REVERSE VOLTAGE V
R
(V)
CAPACITANCE BETWEEN TERMINALS
C
T
(pF)
Power D e rating Curv
e
POWER DISSIPATION P
D
(mW)
AMBIENT TEMPERATURE T
a
( )
℃
F
o
r
w
a
rd
C
h
aract
eri
s
tics
T
a
=
1
0
0
℃
T
a
=
2
5
℃
FORWARD CURRENT I
F
(mA)
FORW
ARD VOLTAGE V
F
(V)
75
200
Reverse Characteristi
cs
T
a
=100
℃
T
a
=25
℃
REVERSE CURRENT I
R
(nA)
REVERSE VOLT
AGE V
R
(V)
2
Rev. - 2.0
www.jscj-elec.com