MMDT5401
DUAL
TRANSISTOR (PNP+PNP)
FEATURES
z
Epitax
ial Planar Die Construction
z
Complementary
NPN Type Available(MMDT 5551)
z
Ideal for Mediu
m Power Amplification and Switching
MRKING:K4M
MAXIMUM RATINGS (T
a
=25℃ unless otherwis
e noted)
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector
-base breakdown voltage
V
(BR)CBO
I
C
=-100μA
, I
E
=0 -160 V
Collector
-emitter breakdown voltage
V
(BR)CEO
I
C
= -1mA
, I
B
=0 -150 V
Emitter-bas
e breakdown voltage
V
(BR)
EBO
I
E
=-10μA,
I
C
=0 -5 V
Collector
cut-off current
I
CBO
V
CB
=-120 V ,
I
E
=0 -0.05 μA
Emitter cut-off current
I
EBO
V
EB
=-3V , I
C
=0 -0.05 μA
h
FE(1)
V
CE
=-5 V
, I
C
= -1mA 50
h
FE(2)
V
CE
=-5 V
, I
C
= -10mA 100
30
0
DC curren
t gain
h
FE(3)
V
CE
=-5 V
, I
C
= -50mA 50
V
CE(sat
)1
I
C
=-10 mA, I
B
=-1mA -0.2 V
Collector
-emitter saturation voltage
V
CE(sat
)2
I
C
=-50 mA, I
B
=-5mA -0.5 V
V
BE(sat)1
I
C
= -10 mA, I
B
=-1mA -1 V
Base-emitte
r saturation voltage
V
BE(sat)2
I
C
= -50 mA, I
B
=-5mA -1 V
Tra
nsition frequency
f
T
V
CE
= -10V, I
C
= -10mA,f =
100MHz 100 MHz
Output
Capacitance
C
ob
V
CB
=-10V
, I
E
= 0,f=1MHz 6 pF
Noise Figure
NF V
CE
= -5.0V, I
C
= -200μA,
R
S
= 10Ω,f =
1.0kHz
8.0 dB
Symbol Parameter Va
lue Units
V
CBO
Collector- Base
Voltage -160 V
V
CEO
Collector-Emitter V
oltage -150 V
V
EBO
Emitter-Base Volt
age -5 V
I
C
Collector Curre
nt -Continuous -0.2 A
P
C
Collector Pow
er Dissipation
0.2 W
Operation Junction and
Stor
age Temperature Range
℃
T
J
,T
stg
-55~+150
SOT-3
63
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
1
Rev. - 2.0
www.jscj-elec.com
-1 -1
0 -100
-200
-400
-600
-800
-1000
-1 -1
0
1
10
100
1000
-200 -
400 -600 -800 -1000 -1200
-0.1
-1
-10
-100
-1 -1
0 -100
-0.01
-0.1
-1
-10
-100
0 25 50 75 100
125 150
0
50
100
150
200
250
-0.1 -1 -1
0
1
10
100
-1 -1
0 -100
0
50
100
150
200
250
300
350
400
-0 -1
-2 -3 -4 -5 -6 -7 -8
-0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
V
BE
-20
0
β=10
I
C
V
BE
sat
——
T
a
=100
℃
T
a
=25
℃
BASE-
EMIT
TER SATURATION
VOLTAGE V
BEsat
(mV)
COLLECTOR CURRENT I
C
(mA)
I
C
f
T
——
COMM
ON EMITTER
V
CE
= -10V
T
a
=25
℃
TRANS
ITION FREQUENCY f
T
(MHz)
COLLECTOR CURRENT I
C
(mA)
I
C
—
—
COMM
ON EMITTER
V
CE
=-5V
T
a
=100
℃
T
a
=25
℃
-200
COLLECTOR CURRENT I
C
(mA)
BASE-EM
MITER VOLTAGE V
BE
(mV)
-200
β=10
T
a
=100
℃
T
a
=25
℃
I
C
V
CEsat
——
COLLECTOR-EMITTER SATURATION
VOLT
AGE V
CEs
at
(V)
COLLECTOR CURRENT I
C
(mA)
P
C
——
T
a
COLLECT
OR POWER DISSIPATION
P
C
(mW)
AMBIENT
TEMPERATURE T
a
( )℃
-70
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
-35
V
CB
/ V
EB
C
ob
/ C
ib
——
C
ob
C
ib
CAPACITANCE C (
pF)
REVERSE VOLT
AGE V (V)
-0.4
-6
00
COMM
ON EMITTER
V
CE
=-5V
I
C
h
FE
——
T
a
=25
℃
T
a
=100
℃
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I
C
(m
A)
St
atic Characteristic
COMM
ON EMITTER
T
a
=25
℃
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
I
B
=-0.01m
A
-0.1mA
-0.09m
A
-0.08m
A
-0.07mA
-0.06m
A
-0.05mA
-0.04m
A
-0.03m
A
-0.02m
A
Ty
pical Characteristics
2
Rev. - 2.0
www.jscj-elec.com