1
P-Channel 30-V (D-S) MOSFET
FEATURES
APPLICATIONS
• Load Switch for Portable Devices
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)
I
D
(A)
a, b
Q
g
(Typ.)
- 30
0.088 at V
GS
= -
10 V
- 2
.7
4.1 nC
0.130 at V
GS
= - 4.5 V - 2.2
S
G
D
P-Channel MOSFET
Notes:
a.
Surfa
ce Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under Steady State conditions is 166 °C/W.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
- 30
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a, b
T
C
= 25 °C
I
D
- 3.5
A
T
C
= 70 °C
- 2.8
T
A
= 25 °C
- 2.7
a, b
T
A
= 70 °C
- 2.2
a, b
Pulsed Drain Current (10 µs Pulse Width)
I
DM
- 12
Continuous Source-Drain Diode Current
a, b
T
C
= 25 °C
I
S
- 1.5
T
A
= 25 °C
- 0.91
a, b
Maximum Power Dissipation
a, b
T
C
= 25 °C
P
D
1.8
W
T
C
= 70 °C
1.14
T
A
= 25 °C
1.1
a, b
T
A
= 70 °C
0.7
a, b
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
c
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a, c
t ≤ 5 s
R
thJA
90 115
°C/W
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
55 70
RoHS
COMPLIANT
www.din-tek.jp
DTS3401
G
(SOT-23-3L)
S
D
To
p View
2
3
1
DTS3401
•
DT-Trench
Power MOSFET
2
Notes
:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses be
yond those listed under “Absolut e Maximum Ratings” may cause permanent damage to t he device. These are stress rating s only, and functiona l operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIF
ICATIONS T
J
= 25
°C, unless otherwise noted
Pa
rameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Volta
ge
V
DS
V
GS
= 0 V
,
I
D
= - 25
0 µA
- 30 V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= - 250 µA
- 32
mV/°C
V
GS(th)
T
emper
ature Coefficient ΔV
GS(th)
/T
J
4.5
Gate-Source Threshol
d Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 1 - 3 V
Gate-S
ource Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
- 100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 30 V, V
GS
= 0 V
- 1
µA
V
DS
= - 30 V, V
GS
= 0 V,
T
J
= 55 °C
- 10
On-State Dr
ain Current
a
I
D(
o
n
)
V
DS
≤ 5 V, V
GS
= - 10 V
- 6 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V, I
D
= - 3.5 A
0.073 0.088
Ω
V
GS
= - 4.5 V,
I
D
= - 2.5 A
0.110 0.138
F
orward Transconductance
a
g
fs
V
DS
= - 10 V
, I
D
= - 3.5 A
7S
Dy
nam
i
c
b
Input Capacitance
C
is
s
V
DS
= - 15 V
, V
GS
= 0 V,
f = 1 MHz
340
pFOutput Capacitance
C
oss
67
Reverse Tr
ansfer Capacitance
C
rss
51
Total Gate Charge
Q
g
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 2.5 A
4.1 6.2
nCGate-S
ource Charge
Q
gs
1.3
Gate-Drain
Charge
Q
gd
1.8
Gate Resi
stance
R
g
f = 1 MHz 10 Ω
Tur
n-On Delay Time
t
d(on)
V
DD
= - 15 V, R
L
= 15 Ω
I
D
≅ - 1 A, V
GEN
= - 4.5 V, R
g
= 1 Ω
40 60
ns
Rise Time
t
r
40 60
Turn
-Off Delay Time
t
d(off)
20 40
Fall
Time
t
f
17 30
Turn
-On Delay Time
t
d(on
)
V
DD
= - 15 V, R
L
= 15 Ω
I
D
≅ - 1 A, V
GEN
= - 10 V, R
g
= 1 Ω
5.5 10
Rise Time
t
r
13 25
Turn
-Off Delay Time
t
d(off)
17 30
Fall
Time
t
f
7.7 15
Drain-Sour
ce Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
- 1.
5
A
Pulse Diode Forward Current
I
SM
- 12
Body Diode Voltage
V
SD
I
S
= - 0.75 A, V
GS
= 0 V
- 0.8 - 1
.2 V
Body Diode Reverse Recovery Time
t
rr
I
F
= - 2.5 A, dI/dt = 100 A/µs
, T
J
= 25 °C
17 30 ns
Body Diode Re
verse Recovery Charge
Q
rr
11 20 nC
Re
verse Recovery Fall Time
t
a
12
ns
Reverse Recov
ery Rise Time
t
b
5
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DTS3401