SB220 thru SB2200
2A Schottky Barrier Rectifier
REV: A
1
of
2
www.gt-semi.com
Features
◆Metal silicon junction, majority carrier conduction
◆Guardring for overvoltage protection
◆Low power loss, high efficiency
◆High current capability, low forward voltage drop
◆High surge capability
Plastic package has Underwrit◆ ers Laboratory
Flammability Classification 94V-0
For use in low voltage, high frequency inverters, ◆
free wheeling, and polarity protection application
Mechanical Data
◆Case: DO-15 molded plastic body
◆Terminals: Plated axial leads, solderable per
MIL-STD-750, method 2026
◆Polarity: Color band denotes cathode end
Mounting Position: Any◆
◆Weight: 0.014 ounce, 0.39 grams (approximate)
DO-15
Maximum Ratings and Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter Symbol
SB
220
SB
230
SB
240
SB
250
SB
260
SB
280
SB
2100
SB
2150
SB
2200
UNITS
Maximum recurrent peak reverse voltage V
RRM
20 30 40 50 60 80 100 150 200 V
Maximum RMS voltage V
RMS
14 21 28 35 42 56 70 105 140 V
Maximum DC blocking voltage V
DC
20 30 40 50 60 80 100 150 200 V
Average Rectified Output Current
0.375″(9.5mm) lead length
I
O
2.0 A
Peak forward surge current
8.3 ms single half- sine -wave
superimposed on rated load
I
FSM
50 A
Maximum instantaneous forward voltage
at I
O
V
F
0.50 0.70 0.85 0.88 0.90 V
Maximum DC reverse current @ T
J
=25℃
At rated DC blocking voltage @ T
J
=100℃
I
R
0.5
10.0
0.05
10.0
mA
Typical junction capacitance(Note 1) C
J
170 pF
Typical thermal resistance(Note 2) R
ΘJA
35.0 ℃/W
Operating junction temperature range T
J,
-55 to+125 -55 to +150 ℃
Storage temperature range T
STG
-55 to+150 ℃
NOTES:
(1)Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
(2) Thermal resistance from junction to Ambient 0.375”(9.5mm) lead length.
REV: A
2
of
2
www.gt-semi.com
RATINGS AND CHARACTERISTIC CURVES
(T
A
=25℃ unless otherwise noted)
SB220 thru SB2200
2A Schottky Barrier Rectifier