BZX84C2V4LY
Zener Diode
Data sheet
●Inner Circuit
P
D
250 mW
●Features ●Inner Circuit
High reliability
Small mold type
●Application ●Packaging Specifications
Voltage regulation Packing
Embossed Tape
Reel Size(mm)
180
Taping Width(mm)
8
●Structure Quantity(pcs)
3000
Silicon Epitaxial Planar Taping Code
T116
Marking
D4C
●Absolute Maximum Ratings
(T
a
= 25℃)
Parameter Symbol Condition Limits Unit
Power dissipation
P
D
on Glass-epoxy substrate
250 mW
2.0 mW/°C
Junction temperature
T
j
- 150 ℃
Storage temperature
T
stg
- -65 ～ 150 ℃
●Characteristic
(T
a
= 25℃)
Parameter Symbol Conditions Min. Typ. Max. Unit
Zener Voltage
V
Z
I
Z
= 5mA
2.20 - 2.60 V
Reverse Current
I
R
V
R
= 1.0V
- - 50 μA
Dynamic Impedance
Z
Z
I
Z
= 5mA
- - 100 Ω
Temperature Coefficient
γ
Z
I
Z
= 5mA
-3.0 - 0.0 mV/℃
Zener voltage (V
Z
) is measured by applying current with 40ms pulse.
Dynamic resistance (Z
Z
) is measured by applying small current (AC) and
specified current (I
Z
) simultaneously.
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2020/05/08_Rev.002© 2020 ROHM Co., Ltd. All rights reserved.
