LL4148
Silicon Epitaxial Planar Switching Diode
Features
* Fast switching diode in MiniMELF case especially suited
for automatic surface mounting
MIN MAX MIN MAX
A 0.134 0.142 3.40 3.60
B 0.008 0.016 0.20 0.40
C 0.055 0.059 1.40 1.50
Maximum Rat i ngs (TA=25℃ unless otherwise noted)
Version: 6.1 www.jgdsemi.com
LL-34
DIM
INCHES MM
C
B
Cathode
A
Parameter
Symbol Value
Unit
Peak Reverse Voltage
V
RM
100 V
Reverse Voltage
V
R
75
V
Average Rectified Forward Current I
F(AV)
200 mA
Non-repetitive Peak Forward Surge Current
at t = 1 s
at t = 1 ms
at t = 1 μs
I
FSM
0.5
1
4
A
Power Dissipation P
tot
500
1)
mW
Junction Temperature
T
j
175
℃
Storage Temperature Range
T
stg
- 65 to + 175
℃
1) Valid provided that electrodes are kept at ambient temperature.
LL4148
Silicon Epitaxial Planar Switching Diode
Electrical Characterist i cs (TA=25℃ unless otherwise noted)
Version: 6.1 www.jgdsemi.com
Parameter
Symbol Min.
Max. Unit
Reverse Breakdown Voltage tested with 100 µA Pulses
V
(BR)R
100
- V
Forward Voltage
at I
F
= 10 mA
V
F
-
1
V
Leakage Current
at V
R
= 20 V
at V
R
= 75 V
at V
R
= 20 V, T
j
= 150℃
I
R
-
-
-
25
5
50
nA
µA
µA
Capacitance
at V
R
= 0, f = 1 MHz
C
tot
-
4 pF
Voltage Rise when Switching ON
tested with 50 mA Forward Pulses
tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz
V
fr
- 2.5
V
Reverse Recovery Time
at I
F
= 10 mA to I
R
= 1 mA, Irr = 0.1 x I
R
,V
R
= 6 V,
R
L
= 100 Ω
t
rr
- 4
ns
Thermal Resistance Junction to Ambient Air
R
thA
-
0.35
1)
K/mW
Rectification Efficiency
at f = 100 MHz, V
RF
= 2 V
η
V
0.45
- -
1)
Valid provided that electrodes are kept at ambient temperature.