BAV19WS, BAV20WS, BAV21WS
Silicon Epitaxial Planar Diodes
Features
* High voltage switching diode
* Fast switching speed
* Surface mount package ideally suited for
automatic insertion
* Marking Code: WO
MIN MAX MIN MAX
A 0.091 0.110 2.30 2.80
B 0.045 0.053 1.15 1.35
C 0.063 0.071 1.60 1.80
D 0.010 0.016 0.25 0.40
E 0.031 0.043 0.80 1.10
F --- 0.006 --- 0.15
G 0.004 0.020 0.10 0.50
H --- 0.004 --- 0.10
Maximum Rat i ngs (TA=25℃ unless otherwise noted)
Version: 6.1 www.jgdsemi.com
SOD-323
DIM
INCHES MM
A
C
D
B
H
E
F
G
Parameter Symbol
Value Unit
Repetitive Peak Reverse Voltage
BAV19WS
BAV20WS
BAV21WS
V
RRM
120
200
250
V
Reverse Voltage
BAV19WS
BAV20WS
BAV21WS
V
R
100
150
200
V
Average Rectified Forward Current
I
F(AV)
200 mA
Forward Continuous Current I
FM
400 mA
Repetitive Peak Forward Current I
FRM
625 mA
Non-Repetitive Peak Forward Surge Current
at t = 1 µs
at t = 1 s
I
FSM
2.5
0.5
A
Power Dissipation P
tot
200 mW
Operating and Storage Temperature Range T
j /
T
stg
- 65 to + 150 ℃
BAV19WS, BAV20WS, BAV21WS
Silicon Epitaxial Planar Diodes
Electrical Characteri st i cs (TA=25℃ unless otherwise noted)
Ratings and Characteristic Curves
Version: 6.1 www.jgdsemi.com
Parameter Symbol
Min. Max. Unit
Reverse Breakdown Voltage
at I
R
= 100 μA
BAV19WS
BAV20WS
BAV21WS
V
(BR)R
120
200
250
-
-
-
V
Reverse Current
at V
R
= 100 V BAV19WS
at V
R
= 150 V BAV20WS
at V
R
= 200 V BAV21WS
I
R
-
-
-
100
100
100
nA
Forward Voltage
at I
F
= 100 mA
at I
F
= 200 mA
V
F
-
-
1
1.25
V
Total Capacitance
at V
R
= 0, f = 1 MHz
C
T
- 5 pF
Reverse Recovery Time
at I
F
= I
R
= 30 mA, I
RR
= 0.1 X I
R
, R
L
= 100 Ω
t
rr
- 50
ns