P3M06040K3 SiC MOS
N-Channel Enhancement Mode
nwww.pnjsemi.com
Ver. 1.0 May. 2020
Page 1 of 8
Gate
1
Drain
2
Source
3
TO-247-3
SiC MOS P3M06040K3
N-Channel Enhancement Mode
Features
ï‚· High Blocking Voltage with Low On-Resistance
ï‚· High-Frequency Operation
ï‚· Ultra Small Q
gd
ï‚· 100% UIS tested
Standards Benefits
ï‚· Improves System Efficiency
ï‚· Improves Power Density
ï‚· Reduction of Heat Sink Requirement
�� System Cost Reduction Savings
Application
ï‚· Solar Inverters
ï‚· EV Battery Chargers
ï‚· High Voltage DC/DC Converters
ï‚· Switch Mode Power Supplies
Order Information
Part number
Package
Marking
P3M06040K3
TO-247-3
P3M06040K3
V
RRM
=
650
V
I
D
=
76
A
I
D
(100℃)
=
60
A
R
DS(on)
=
40
mΩ
P3M06040K3 SiC MOS
N-Channel Enhancement Mode
nwww.pnjsemi.com
Ver. 1.0 May. 2020
Page 2 of 8
Contents
Features ........................................................................................................ 1
Standards Benefits ................................................................................... 1
Application .................................................................................................. 1
Order Information .................................................................................... 1
Contents..................................................................................... 2
1. Maximum Ratings ................................................................................ 3
2. Electrical Characteristics .................................................................... 3
3. Reverse Diode Characteristics ......................................................... 6
4. Thermal Characteristics ...................................................................... 6
5. Typical Performance ........................................................................... 7
6. Package Outlines .................................................................................. 9