R6050JNZ
Nch 600V 50A Power MOSFET
Datasheet
llOutline
V
DSS
600V
TO-3PF
R
DS(on)
(Max.)
0.083Ω
I
D
±50A
P
D
120W
llFeatures
llInner circuit
1) Fast reverse recovery time (trr)
2) Low on-resistance
3) Fast switching speed
4) Drive circuits can be simple
5) Pb-free plating ; RoHS compliant
llApplication
llPackaging specifications
Switching applications
Packing Tube
Packing code C17
Marking R6050JNZ
Quantity (pcs) 300
llAbsolute maximum ratings (T
a
= 25°C ,unless otherwise specified)
Parameter Symbol Value Unit
Drain - Source voltage
V
DSS
600 V
Continuous drain current (T
c
= 25°C) I
D
*1
±50 A
Pulsed drain current
I
DP
*2
±150 A
Gate - Source voltage
V
GSS
±30 V
Avalanche current, single pulse
I
AS
*3
10 A
Avalanche energy, single pulse
E
AS
*3
1091 mJ
Power dissipation (T
c
= 25°C) P
D
120 W
Junction temperature
T
j
150 ℃
Operating junction and storage temperature range
T
stg
-55 to +150 ℃
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© 2019 ROHM Co., Ltd. All rights reserved.
1/11
20191226 - Rev.002
R6050JNZ
Datasheet
llThermal resistance
Parameter Symbol
Values
Unit
Min. Typ. Max.
Thermal resistance, junction - case
R
thJC
- - 1.03 ℃/W
Thermal resistance, junction - ambient
R
thJA
- - 40 ℃/W
Soldering temperature, wavesoldering for 10s
T
sold
- - 265 ℃
llElectrical characteristics (T
a
= 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
600 - - V
Zero gate voltage
drain current
I
DSS
V
DS
= 600V, V
GS
= 0V
- - 100 μA
T
j
= 25°C
Gate - Source leakage current
I
GSS
V
GS
= ±30V, V
DS
= 0V
- - ±100 nA
Gate threshold voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 5.0mA
5.0 6.0 7.0 V
Static drain - source
on - state resistance
R
DS(on)
*5
V
GS
= 15V, I
D
= 25A
- 0.064 0.083 Ω
T
j
= 25°C
Gate resistance
R
G
f = 1MHz, open drain - 1.2 - Ω
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© 2019 ROHM Co., Ltd. All rights reserved.
2/11
20191226 - Rev.002