DTC123J series
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
llOutline
Parameter Value
VMT3
EMT3F
V
CC
50V
　　 　　
I
C(MAX.)
100mA
R
1
2.2kΩ
DTC123JM DTC123JEB
R
2
47kΩ
(SC-105AA) (SC-89)
EMT3
UMT3F
llFeatures
　　 　　
1) Built-In Biasing Resistors
2) Built-in bias resistors enable the configuration of
　an inverter circuit without connecting external
　input resistors (see inner circuit) .
3) Only the on/off conditions need to be set
　for operation, making the circuit design easy.
4) Complementary PNP Types: DTA123J series
DTC123JE DTC123JUB
SOT-416(SC-75A) (SC-85)
UMT3
SMT3
　　 　　
DTC123JUA DTC123JKA
SOT-323(SC-70) SOT-346(SC-59)
llApplication
INVERTER,INTERFACE,DRIVER
llInner circuit
DTC123JM/ DTC123JEB/ DTC123JUB DTC123JE/ DTC123JUA/ DTC123JKA
llPackaging specifications
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　
Part No. Package
Package
size
Taping
code
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit.(pcs)
Marking
DTC123JM VMT3 1212 T2L 180 8 8000 E42
DTC123JEB EMT3F 1616 TL 180 8 3000 E42
DTC123JE EMT3 1616 TL 180 8 3000 E42
DTC123JUB UMT3F 2021 TL 180 8 3000 142
DTC123JUA UMT3 2021 T106 180 8 3000 142
DTC123JKA SMT3 2928 T146 180 8 3000 E42
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 �� 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　
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20150311 - Rev.002
DTC123J series
　 　 　 　 　 　 　 　 　
Datasheet
llAbsolute maximum ratings (T
a
= 25°C)
Parameter Symbol Values Unit
Supply voltage
V
CC
50 V
Input voltage
V
IN
-5 to 12 V
Output current
I
O
100 mA
Collector current
I
C(MAX)
*1
100 mA
Power dissipation
DTC123JM
P
D
*2
150
mW
DTC123JEB 150
DTC123JE 150
DTC123JUB 200
DTC123JUA 200
DTC123JKA 200
Junction temperature
T
j
150 ℃
Range of storage temperature
T
stg
-55 to +150 ℃
llElectrical characteristics (T
a
= 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Input voltage
V
I(off)
V
CC
= 5V, I
O
= 100μA - - 0.5
V
V
I(on)
V
O
= 0.3V, I
O
= 5mA
1.1 - -
Output voltage
V
O(on)
I
O
/ I
I
= 5mA / 0.25mA
- 100 300 mV
Input current
I
I
V
I
= 5V
- - 3.6 mA
Output current
I
O(off)
V
CC
= 50V, V
I
= 0V
- - 500 nA
DC current gain
G
I
V
O
= 5V, I
O
= 10mA
80 - - -
Input resistance
R
1
- 1.54 2.2 2.86 kΩ
Resistance ratio
R
2
/R
1
- 17 21 26 -
Transition frequency
f
T
*1
V
CE
= 10V, I
E
= -5mA,
f = 100MHz
- 250 - MHz
*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　　 　 　 　　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/10
20150311 - Rev.002