Rev. A, October 2019
Description
Features
Typical applications
Package
DFN8X8-4L
650V-34mW SiC FET
w EV charging
w PV inverters
w Switch mode power supplies
w Power factor correction modules
w Motor drives
w Induction heating
w DFN8X8-4L package for faster switching, clean gate waveforms
This SiC FET device is based on a unique ‘cascode’ circuit
configuration, in which a normally-on SiC JFET is co-packaged with a
Si MOSFET to produce a normally-off SiC FET device. The device’s
standard gate-drive characteristics allows for a true “drop-in
replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction
devices. Available in the DFN8X8-4L package, this device exhibits
ultra-low gate charge and exceptional reverse recovery
characteristics, making it ideal for switching inductive loads , and any
application requiring standard gate drive.
w Typical on-resistance R
DS(on),typ
of 34mW
w Maximum operating temperature of 150°C
w Excellent reverse recovery
w Low gate charge
w Low intrinsic capacitance
Part Number
Marking
UF3SC065030D8S
UF3SC065030D8S
w ESD protected, HBM class 2
DATASHEET
UF3SC065030D8S
3
1
2
D
(TAB)
S (3,4)
G (1)
KS (2)
4
1
Datasheet: UF3SC065030D8S Rev. A, October 2019 1
Maximum Ratings
Symbol Value Units
V
DS
650 V
V
GS
-25 to +25 V
I
D
18 A
I
DM
160 A
E
AS
120 mJ
P
tot
179 W
T
J,max
150 °C
T
J
, T
STG
-55 to 150 °C
1. Limited by bondwires
2. Pulse width t
p
limited by T
J,max
3. Starting T
J
= 25°C
Thermal Characteristics
Min Typ Max
R
qJC
0.54 0.7 °C/W
Units
Parameter
Symbol
Test Conditions
Value
Thermal resistance, junction-to-case
Gate-source voltage
DC
Power dissipation
T
C
= 25°C
Maximum junction temperature
Operating and storage temperature
T
C
< 134°C
Pulsed drain current
2
T
C
= 25°C
Single pulsed avalanche energy
3
L=15mH, I
AS
=4A
Continuous drain current
1
Parameter
Test Conditions
Drain-source voltage
Datasheet: UF3SC065030D8S Rev. A, October 2019 2