桂林斯壯微電子有限責任公司

Guilin Strong Micro-Electronics Co.,Ltd.

GMBT5551A(销售型號 MMBT5551A)

■FEATURES 特點

NPN High Voltage Transistor

■MAXIMUM RATINGS 最大額定值

Characteristic 特性參數

Symbol 符號

Rating 額定值

Unit 單位

Collector Emitter Voltage

集電極-發射極電壓

V

CEO

200

Vdc

Collector Base Voltage

集電極-基極電壓

V

CBO

210

Vdc

Emitter Base Voltage

發射極-基極電壓

V

EBO

6.0

Vdc

Collector Current—Continuous

集電極電流-連續

Ic

600

mAdc

■THERMAL CHARACTERISTICS 熱特性

Characteristic 特性參數

Symbol 符號

Max 最大值

Unit 單位

Total Device Dissipation 總耗散功率

FR-5 Board(1)

T

A

=25℃環境溫度爲 25℃

Derate above25℃超過 25℃遞減

P

D

225

1.8

mW

mW/℃

Thermal Resistance Junction to Ambient 熱阻

R

Θ

JA

556

℃/W

Total Device Dissipation 總耗散功率

Alumina Substrate 氧化鋁襯底,(2)T

A

=25℃

Derate above25℃ 超過 25℃遞減

P

D

300

2.4

mW

mW/℃

Thermal Resistance Junction to Ambient 熱阻

R

Θ

JA

417

℃/W

Junction and Storage Temperature

結溫和儲存溫度

T

J

,T

stg

150℃, -55to+150℃

■DEVICE MARKING 打標

GMBT5551A(销售型號 MMBT5551A)=G1

桂林斯壯微電子有限責任公司

Guilin Strong Micro-Electronics Co.,Ltd.

GMBT5551A(销售型號 MMBT5551A)

■ELECTRICAL CHARACTERISTICS 電特性

(T

A

=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)

Characteristic

特性參數

Symbol

符號

Min

最小值

Max

最大值

Unit

單位

Collector Emitter Breakdown Voltage(3)

集電極-發射極擊穿電壓(Ic=1.0mAdc,I

B

=0)

V

(BR)CEO

200

—

Vdc

Collector Base Breakdown Voltage

集電極-基極擊穿電壓(Ic=100μAdc,I

E

=0)

V

(BR)CBO

210

—

Vdc

Emitter-Base Breakdown Voltage

發射極-基極擊穿電壓(I

E

=10μAdc,Ic=0)

V

(BR)EBO

6.0

—

Vdc

Emitter Cutoff Current

發射極截止電流(V

EB

=4.0Vdc,I

c

=0)

I

EBO

—

50

nAdc

Collector Cutoff Current

集電極截止電流(V

CB

=120Vdc,I

E

=0)

I

CBO

—

50

nAdc

DC Current Gain 直流電流增益

H

FE

—

(I

c

=1.0mAdc,V

CE

=5.0Vdc)

80

—

(I

c

=10mAdc,V

CE

=5.0Vdc)

80

250

(I

c

=50mAdc,V

CE

=5.0Vdc)

30

—

Collector-Emitter Saturation Voltage

集電極-發射極飽和壓降

(I

c

=10mAdc, I

B

=1.0mAdc)

(I

c

=50mAdc, I

B

=5.0mAdc)

V

CE(sat)

—

—

0.15

0.2

Vdc

Base-Emitter Saturation Voltage

基極-發射極飽和壓降

(I

c

=10mAdc, I

B

=1.0mAdc)

(I

c

=50mAdc, I

B

=5.0mAdc)

V

BE(sat)

—

—

1.0

1.0

Vdc

Current-Gain-Bandwidth Product 電流增益-帶寬乘積

(I

c

=-10mAdc,V

CE

=-10Vdc,f=100MHz)

f

T

100

300

MHz

Output Capacitance 輸出電容

(V

CB

=-10.0Vdc, I

E

=0, f=1.0MHz)

C

obo

—

6.0

pF

Small-Signal Current Gain 小信號電流增益

(V

CE

=-10Vdc, I

C

=-1.0mAdc, f=1.0KHz)

h

fe

40

200

—

Noise Figure 噪声係數

(V

CE

=-5.0Vdc, I

C

=-200μAdc,R

s

=1.0kΩf=1.0KHz)

NF

—

8.0

dB

１．FR-5=1.0×0.75×0.062in.

２．Alumina=0.4×0.3×0.024in.99.5%alumina.

３．ulse Width<300us;Duty Cycle<2.0%.