桂 林 斯 壯 微 電 子 有 限 責 任 公 司
Guilin Strong Micro-Electronics Co.,Ltd.
GM2305A
■ELECTRICAL CHARACTERISTICS 電特性
(T
A
=25℃ unless otherwise noted 如無特殊說明,溫度爲 25℃)
Drain-Source Breakdown Voltage
漏極-源極擊穿電壓(I
D
= -250uA,V
GS
=0V)
Gate Threshold Voltage
栅極開启電壓(I
D
= -250uA,V
GS
= V
DS
)
Diode Forward Voltage Drop
内附二極管正向壓降(I
S
= -1.6A,V
GS
=0V)
Zero Gate Voltage Drain Current
零栅壓漏極電流(V
GS
=0V, V
DS
= -16V)
(V
GS
=0V, V
DS
= -16V, T
A
=55℃)
Gate Body Leakage
栅極漏電流(V
GS
=+10V, V
DS
=0V)
Static Drain-Source On-State Resistance
静态漏源導通電阻(I
D
= -4.1A,V
GS
= -4.5V)
Static Drain-Source On-State Resistance
静态漏源導通電阻(I
D
= -3A,V
GS
= -2.5V)
Input Capacitance 輸入電容
(V
GS
=0V, V
DS
= -4V,f=1MHz)
Output Capacitance 輸出電容
(V
GS
=0V, V
DS
= -4V,f=1MHz)
Turn-ON Time 开启時間
(V
DS
= -4V, I
D
= -1A, R
GEN
=6Ω)
Turn-OFF Time 关断時間
(V
DS
= -4V, I
D
= -1A, R
GEN
=6Ω)
Pulse Width<300μs; Duty Cycle<2.0%