SLP7N
6
SLP7N65S / SLF7N65S
Pb
RoHS
LEAD FREE
6
5S / SLF7N6
5
SLP7N65S
/
SLF7N65S
650V N-Channel MOSFET
General Description
This Power MOSFET is produced using Maple semi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored
to minimize on
-
state resistance, provide superior switching
Features
- 7.5A, 650V, R
DS(on)typ
= 1.2Ω@V
GS
= 10 V
- Low gate charge ( typical 48nC)
- High ruggedness
-
Fast switching
5
S
to
minimize
on
state
resistance,
provide
superior
switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge topology.
Fast
switching
- 100% avalanche tested
- Improved dv/dt capability
D
Absolute Maximum Ratings T
C
= 25℃ unless otherwise noted
Symbol Parameter SLP7N65S SLF7N65S Units
V
DSS
Drain-Source Voltage 650 V
Drain Current
Continuous (T
=25
)
75
A
G
S
G D S
TO-220
G D S
TO-220F
I
D
Drain
Current
-
Continuous
(T
C
=
25
)
7
.
5
A
- Continuous (T
C
= 100
℃
)4.6A
I
DM
Drain Current - Pulsed
(Note 1)
21 A
V
GSS
Gate-Source Voltage
±
30 V
EAS Single Pulsed Avalanche Energy
(Note 2)
128 mJ
I
AR
Avalanche Current
(Note 1)
7.5 A
E
AR
Repetitive Avalanche Energy
(Note 1)
12.6 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
3.3 V/ns
P
D
Power Dissipation (T
C
= 25
℃
)7835W
P
D
- Derate above 25
℃
0.62 0.28 W/
℃
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150
℃
T
L
Maximum lead temperature for soldering purposes,
300
℃
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
Max
Units
Maple Semiconductor CO., LTD http://www.meipusen.com Rev.01 NOV. 2018
Symbol
Parameter
Units
SLP7N65S SLF7N65S
R
θJC
Thermal Resistance, Junction-to-Case 1.6 3.57
℃
/W
R
θJA
Thermal Resistance, Junction-to-Ambient 62.5 62.5
℃
/W
SLP7N
6
Electrical Characteristics T
C
= 25℃unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
6
5S / SLF7N6
5
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 250 uA 650 -- -- V
△
BV
DSS
/
△
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 uA, Referenced to 25
℃
-- 0.64 -- V/
℃
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 650 V, V
GS
= 0 V -- -- 10 uA
V
DS
= 520 V, T
C
= 125
℃
-- -- 100 uA
I
GSSF
Gate-Body Leakage Current,
Forward
V
GS
= 30 V, V
DS
= 0 V -- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse V
GS
= -30 V, V
DS
= 0 V -- -- -100 nA
5
S
On Characteristics
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 uA 2.0 -- 4.0 V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 3.75A -- 1.2 1.4 Ω
g
FS
Forward Transconductance V
DS
= 40 V, I
D
= 3.75 A
(Note 4)
-- 7.5 -- S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
-- 1100 -- pF
C
Output Capacitance
251
pF
f = 1.0 MHz
C
oss
Output
Capacitance
--
251
--
pF
C
rss
Reverse Transfer Capacitance -- 14 -- pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 300 V, I
D
=7.5 A,
R
G
= 25 Ω
(Note 4, 5)
-- 15.2 -- ns
t
r
Turn-On Rise Time -- 20 -- ns
t
d(off)
Turn-Off Delay Time -- 46 -- ns
t
f
Turn-Off Fall Time -- 22 -- ns
Q
g
Total Gate Charge
V
DS
= 520 V, I
D
= 7.5 A,
-- 48 -- nC
Q
Gt
SCh
7
C
V
GS
= 10 V
(Note 4, 5)
Q
gs
G
a
t
e-
S
ource
Ch
arge --
7
-- n
C
Q
gd
Gate-Drain Charge -- 7.4 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 7.5 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 21 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= 7.5A -- -- 1.4 V
t
rr
Reverse Recovery Time V
GS
= 0 V, I
S
= 7.5 A, -- 320 -- ns
Q
rr
Reverse Recovery Charge dI
F
/ dt = 100 A/us
(Note 4)
-- 3.7 -- uC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1mH,I
AS
= 16A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3. I
SD
≤ 7.5A, di/dt ≤ 300A/us, V
DD
≤BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Maple Semiconductor CO., LTD http://www.meipusen.com Rev.01 NOV. 2018