IRFD320, SiHFD320
www.vishay.com
Vishay Siliconix
S14-2355-Rev. D, 08-Dec-14
1
Document Number: 91134
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• For automatic insertion
• End stackable
•Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertiable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain servers as a
thermal link to the mounting surface for power dissipation
levels up to 1 W.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 21 mH, R
g
= 25 Ω, I
AS
= 2.0 A (see fig. 12).
c. I
SD
≤ 2.0 A, dI/dt ≤ 40 A/μs, V
DD
≤ V
DS
, T
J
≤ 150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V) 400
R
DS(on)
(Ω)V
GS
= 10 V 1.8
Q
g
(Max.) (nC) 20
Q
gs
(nC) 3.3
Q
gd
(nC) 11
Configuration Single
N-Channel MOSFET
G
D
S
RoHS
COMPLIANT
ORDERING INFORMATION
Package HVMDIP
Lead (Pb)-free
IRFD320PbF
SiHFD320-E3
SnPb
IRFD320
SiHFD320
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
400
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at 10 V
T
A
= 25 °C
I
D
0.49
AT
A
= 100 °C 0.31
Pulsed Drain Current
a
I
DM
3.9
Linear Derating Factor 0.0083
W/°C
Single Pulse Avalanche Energy
b
E
AS
48 mJ
Avalanche Current
a
I
AR
0.49 A
Repetitive Avalanche Energy
a
E
AR
0.10 mJ
Maximum Power Dissipation T
A
= 25 °C P
D
1.0 W
Peak Diode Recovery dV/dt
c
dV/dt 4.0 V/ns
Oper
ating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150
°C
Soldering Recommendations (Peak Temperature)
d
for 10 s 300