Document N
umber: 90695 www.vishay.com
Revision: 25-Oct-10 1
R-C Thermal Model Parameters
IRFD320_RC, SiHFD320_RC
Vishay Siliconix
DESCRIPTION
The parametric values in the R-C thermal model have been
derived using curve-fitting techniques. R-C values for the
electrical circuit in the Foster/tank and Cauer/filter
configurations are included. When implemented in P-SPICE,
these values have matching characteristic curves to the
single-pulse transient thermal impedance curves for the
MOSFET.
These RC values can be used in the P-SPICE simulation to
evaluate the thermal behavior of the MOSFET junction
temperature under a defined power profile. These
techniques are described in application note AN609,
“Thermal Simulation of Power MOSFETs on the P-SPICE
Platform”.
R-C THERMAL MODEL FOR TANK CONFIGURATION
Note
N/A indicates not applicable
This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to
the appropriate datasheet of the same number for guaranteed specification limits.
RT2
RT3
RT4
T (Ambient)
RT1
CT1 CT2 CT3
CT4
T (Junction)
R-C VALUES FOR TANK CONFIGURATION
THERMAL RESISTANCE (°C/W)
Junction to Ambient Case Foot
RT1 53.8025 N/A N/A
RT2 43.3725 N/A N/A
RT3 17.4603 N/A N/A
RT4 5.3647 N/A N/A
THERMAL CAPACITANCE (Joules/°C)
Junction to Ambient Case Foot
CT1 483.6474m N/A N/A
CT2 221.9751m N/A N/A
CT3 34.0005m N/A N/A
CT4 2.6819m N/A N/A
www.vishay.com Document Number: 90695
2 Revision: 25-Oct-10
IRFD320_RC, SiHFD320_RC
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
Note
N/A indicates not applicable
RF2
RF3
RF4
T (Ambient)
RF1
CF1
CF2 CF3
CF4
T (Junction)
GND
R-C VALUES FOR FILTER CONFIGURATION
THERMAL RESISTANCE (°C/W)
Junction to Ambient Case Foot
RF1 7.4366 N/A N/A
RF2 23.5780 N/A N/A
RF3 59.6050 N/A N/A
RF4 29.3804 N/A N/A
THERMAL CAPACITANCE (Joules/°C)
Junction to Ambient Case Foot
CF1 3.0426m N/A N/A
CF2 29.8968m N/A N/A
CF3 113.4501m N/A N/A
CF4 545.6212m N/A N/A