MBR20100CT
High Tjm Low IRRM Schottky Barrier Diodes
MBR20100CT
VRSM
V
100
VRRM
V
100
A=Anode, C=Cathode, TAB=Cathode
A
A
C
C(TAB)
A C A
Dimensions TO-220AB
Symbol Test Conditions Maximum Ratings Unit
IFRMS
IFAV
IFAV
TC=165
o
C; rectangular, d=0.5
TC=165
o
C; rectangular, d=0.5; per device
35
10
20
A
IFSM TVJ=45
o
C; tp=10ms (50Hz), sine
EAS IAS=8A; L=180uH; TVJ=25
o
C; non-repetitive
VA=1.5
.
VRRM typ.; f=10kHz; repetitive
150
7
0.8
A
mJ
IAR A
TVJ
TVJM
Tstg
-55...+175
175
-55...+150
o
C
5000(dv/dt)cr V/us
Ptot TC=25
o
C
Md mounting torque
typical
90
0.4...0.6
2
W
Nm
Weight g
Symbol Test Conditions Characteristic Values
typ. max.
Unit
TVJ=25
o
C; VR=VRRM
TVJ=125
o
C; VR=VRRM
0.1
100
mA
IR
RthJC
RthCH
1.7
K/W
IF=10A; TVJ=125
o
C
IF=10A; TVJ=25
o
C
IF=20A; TVJ=125
o
C
0.65
0.80
0.77
V
VF
0.5
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.38 0.56 0.015 0.022
R 2.29 2.79 0.090 0.110
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
APPLICATIONS
* Rectifiers in switch mode power
supplies (SMPS)
* Free wheeling diode in low voltage
converters
FEATURES
* International standard package
* Very low VF
* Extremely low switching losses
* Low IRM-values
* RoHS compliant
P1
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
www.sirectifier.com
MBR20100CT
High Tjm Low IRRM Schottky Barrier Diodes
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
10
100
0 20406080100
0.0001
0.001
0.01
0.1
1
10
515250102030
0
5
10
15
20
25
30
35
0.0001 0.001 0.01 0.1 1 10
0.01
0.1
1
04080120160
0
5
10
15
20
25
30
35
40
I
F(AV)
T
C
°C
I
F(AV)
t
s
K/W
0 20406080100
10
100
1000
C
T
I
R
I
F
A
V
F
V
R
V
R
V
pF
V
mA
A
P
(AV)
W
Z
thJC
V
Sing le P u lse
(Thermal Resistance)
DSSK 16-01A
A
T
VJ
=175°C
150°C
125°C
100°C
75°C
25°C
T
VJ
=
175°C
150°C
125°C
25°C
T
VJ
= 25°C
d=0.5
d =
DC
0.5
0.33
0.25
0.17
0.08
50°C
DC
0.08
D=0.5
0.33
0.25
0.17
Note: All curves are per Diode
Fig. 3 Typ. junction capacitance C
T
versus reverse voltage V
R
Fig. 2 Typ. value of reverse current I
R
versus reverse voltage V
R
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 4 Average forward current I
F(AV)
versus case temperature T
C
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case at various duty cycles
P2
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
www.sirectifier.com