MBR2070CT thru MBR20100CT
Symbol Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=120 C
IFSM
Maximum Ratings
20
150
A
A
Unit
o
Maximum Forward
Voltage (Note 1)
IF=10A @TJ=25 C
IF=10A @TJ=125 C
IF=20A @TJ=25 C
IF=20A @TJ=125 C
VF
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25 C
@TJ=125 C
CJ Typical Junction Capacitance Per Element (Note 3)
TJ
Operating Temperature Range
0.75
0.85
0.85
0.95
0.1
100
2.0
250
-55 to +150
-55 to +175
V
mA
pF
o
o
o
o
o
Typical Thermal Resistance (Note 2)ROJC
C/W
o
C
o
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
o
High Tjm Low IRRM Schottky Barrier Diodes
MBR2070CT
MBR2080CT
MBR2090CT
MBR20100CT
VRRM
V
70
80
90
100
VRMS
V
49
56
63
70
VDC
V
70
80
90
100
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
dv/dt Voltage Rate Of Change (Rated VR) 10000 V/us
C
o
TSTG Storage Temperature Range
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 2 grams
* Mounting position: Any
A=Anode, C=Cathode, TAB=Cathode
A
A
C
C(TAB)
A C A
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Dimensions TO-220AB
*
RoHS compliant
P1
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
www.sirectifier.com
MBR2070CT thru MBR20100CT
High Tjm Low IRRM Schottky Barrier Diodes
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
1 5 10 50 1002
20
0
25
50
75
100
125
150
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
25
75 100 125 150
5
0
50
20
175
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
15
0
10
RESISTIVE OR INDUCTIVE LOAD
CASE TEMPERATURE , C
FIG.5 - TYPICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
REVERSE VOLTAGE , VOLTS
10
1
100
1000
100
10
0.1
4
T
J
= 25 C, f= 1MHz
INSTANTANEOUS FORWARD CURRENT ,(A)
1.0
10
100
0.1
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
0.2
0.3
0.7
0.8
1.0
10
100
0.4 0.5 0.6
0.1
1.0
0.9
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
0.1
PULSE WIDTH 300us
2% Duty cycle
T
J
= 25 C
RATED PEAK REVERSE VOLTAGE (%)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS
REVERSE CURRENT ,(mA)
20 40
120
140
0
0.001
0.1
1.0
100
10
60 80 100
T
J
= 100 C
0.01
T
J
= 25 C
T
J
= 75 C
P2
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
www.sirectifier.com